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| Main Authors: | , , , , |
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| Format: | Preprint |
| Published: |
2024
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| Subjects: | |
| Online Access: | https://arxiv.org/abs/2404.04000 |
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| _version_ | 1866913301330395136 |
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| author | Wu, Tong Chen, Haoran Ma, Tianping Xu, Jia Wu, Yizheng |
| author_facet | Wu, Tong Chen, Haoran Ma, Tianping Xu, Jia Wu, Yizheng |
| contents | Efficient control of antiferromagnetic (AFM) domain switching in thin films is vital for advancing antiferromagnet-based memory devices. In this study, we directly observed the current-driven switching process of CoO AFM domains in the Pt/CoO(001) bilayer by the magneto-optical birefringence effect. The observed critical current density for AFM domain switching remains nearly constant across varying CoO thicknesses, associated with the consistent switching polarity n $\perp$ j, suggesting the dominance of the thermomagnetoelastic effect, where and stand for Neel vector and current density vector, respectively. Further confirmation comes from a similar switching process with n $\perp$ j observed in the Pt/Al2O3/CoO sample, excluding the contribution of spin current injection. Remarkably, it was also surprisingly observed that the Neel vector can be further switched parallel to the current direction (n//j) at higher current density. Our findings not only enhance the understanding of current-driven AFM domain switching but also present new avenues for manipulating AFM domains. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2404_04000 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Current-density-modulated Antiferromagnetic Domain Switching Revealed by Optical Imaging in Pt/CoO(001) Bilayer Wu, Tong Chen, Haoran Ma, Tianping Xu, Jia Wu, Yizheng Materials Science Applied Physics Efficient control of antiferromagnetic (AFM) domain switching in thin films is vital for advancing antiferromagnet-based memory devices. In this study, we directly observed the current-driven switching process of CoO AFM domains in the Pt/CoO(001) bilayer by the magneto-optical birefringence effect. The observed critical current density for AFM domain switching remains nearly constant across varying CoO thicknesses, associated with the consistent switching polarity n $\perp$ j, suggesting the dominance of the thermomagnetoelastic effect, where and stand for Neel vector and current density vector, respectively. Further confirmation comes from a similar switching process with n $\perp$ j observed in the Pt/Al2O3/CoO sample, excluding the contribution of spin current injection. Remarkably, it was also surprisingly observed that the Neel vector can be further switched parallel to the current direction (n//j) at higher current density. Our findings not only enhance the understanding of current-driven AFM domain switching but also present new avenues for manipulating AFM domains. |
| title | Current-density-modulated Antiferromagnetic Domain Switching Revealed by Optical Imaging in Pt/CoO(001) Bilayer |
| topic | Materials Science Applied Physics |
| url | https://arxiv.org/abs/2404.04000 |