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Main Authors: Wang, Ruiqing, Yao, Danyang, Zhou, Jiuren, Li, Yang, Jiang, Zhi, Chen, Dongliang, Ran, Xu, Gao, Yu, Cheng, Zixuan, Wang, Yong, Liu, Yan, Hao, Yue, Han, Genquan
Format: Preprint
Published: 2024
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Online Access:https://arxiv.org/abs/2404.04863
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author Wang, Ruiqing
Yao, Danyang
Zhou, Jiuren
Li, Yang
Jiang, Zhi
Chen, Dongliang
Ran, Xu
Gao, Yu
Cheng, Zixuan
Wang, Yong
Liu, Yan
Hao, Yue
Han, Genquan
author_facet Wang, Ruiqing
Yao, Danyang
Zhou, Jiuren
Li, Yang
Jiang, Zhi
Chen, Dongliang
Ran, Xu
Gao, Yu
Cheng, Zixuan
Wang, Yong
Liu, Yan
Hao, Yue
Han, Genquan
contents For the first time, the fatigue behavior involving external oxygen in highly Sc-doped AlN ferroelectric film was observed using transmission electron microscope techniques. Despite increasing the Sc composition in AlScN film contributes to reducing the device operation voltage, the inherent affinity of Sc for oxygen introduces instability in device performance. In this study, oxygen incorporation at top electrode edges and grain boundaries accompanied with an increase in current leakage and the disappearance of ferroelectric properties, was observed in nanoscale after long-term field cycling. This observation indicates the emergence of non-ferroelectric and even amorphous states. This presented work revealed solid experimental evidence of an oxygen-involved fatigue mechanism, providing valuable insights into the physical nature of the ferroelectric properties of AlScN films.
format Preprint
id arxiv_https___arxiv_org_abs_2404_04863
institution arXiv
publishDate 2024
record_format arxiv
spellingShingle Microscopic Insights into Fatigue Mechanism in Wurtzite Ferroelectric Al$_{0.65}$Sc$_{0.35}$N: Oxygen Infiltration Enabled Grain Amorphization Spanning Boundary to Bulk
Wang, Ruiqing
Yao, Danyang
Zhou, Jiuren
Li, Yang
Jiang, Zhi
Chen, Dongliang
Ran, Xu
Gao, Yu
Cheng, Zixuan
Wang, Yong
Liu, Yan
Hao, Yue
Han, Genquan
Materials Science
For the first time, the fatigue behavior involving external oxygen in highly Sc-doped AlN ferroelectric film was observed using transmission electron microscope techniques. Despite increasing the Sc composition in AlScN film contributes to reducing the device operation voltage, the inherent affinity of Sc for oxygen introduces instability in device performance. In this study, oxygen incorporation at top electrode edges and grain boundaries accompanied with an increase in current leakage and the disappearance of ferroelectric properties, was observed in nanoscale after long-term field cycling. This observation indicates the emergence of non-ferroelectric and even amorphous states. This presented work revealed solid experimental evidence of an oxygen-involved fatigue mechanism, providing valuable insights into the physical nature of the ferroelectric properties of AlScN films.
title Microscopic Insights into Fatigue Mechanism in Wurtzite Ferroelectric Al$_{0.65}$Sc$_{0.35}$N: Oxygen Infiltration Enabled Grain Amorphization Spanning Boundary to Bulk
topic Materials Science
url https://arxiv.org/abs/2404.04863