Design and Simulation of a III-Nitride Light Emitting Transistor
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arXiv
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| Hauptverfasser: | , , , , |
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| Format: | Preprint |
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2024
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| _version_ | 1866911829934997504 |
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| author | Awwad, Mohammad Rahman, Sheikh Ifatur Joishi, Chandan Anderson, Betty Lise Rajan, Siddharth |
| author_facet | Awwad, Mohammad Rahman, Sheikh Ifatur Joishi, Chandan Anderson, Betty Lise Rajan, Siddharth |
| contents | This paper describes the design and characteristics of monolithically integrated three-terminal gated III-Nitride light emitting diodes (LEDs) devices. The impact of channel doping and thickness on the voltage penalty of the transistor-LED hybrid device is analyzed, and it is shown that with appropriate design, low voltage drop can be realized across integrated gated LED structures. The impact of device design on the switching charge is investigated, and it is shown that the adoption of an integrated LED/transistor structure can reduce the switching charge necessary for operation of a switched LED display device by an order of magnitude when compared with stand-alone light-emitting diodes. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2404_04995 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Design and Simulation of a III-Nitride Light Emitting Transistor Awwad, Mohammad Rahman, Sheikh Ifatur Joishi, Chandan Anderson, Betty Lise Rajan, Siddharth Applied Physics This paper describes the design and characteristics of monolithically integrated three-terminal gated III-Nitride light emitting diodes (LEDs) devices. The impact of channel doping and thickness on the voltage penalty of the transistor-LED hybrid device is analyzed, and it is shown that with appropriate design, low voltage drop can be realized across integrated gated LED structures. The impact of device design on the switching charge is investigated, and it is shown that the adoption of an integrated LED/transistor structure can reduce the switching charge necessary for operation of a switched LED display device by an order of magnitude when compared with stand-alone light-emitting diodes. |
| title | Design and Simulation of a III-Nitride Light Emitting Transistor |
| topic | Applied Physics |
| url | https://arxiv.org/abs/2404.04995 |