SrRuO3 under tensile strain: Thickness-dependent electronic and magnetic properties
Fuente:
arXiv
Gespeichert in:
| Hauptverfasser: | , , , , , , , , |
|---|---|
| Format: | Preprint |
| Veröffentlicht: |
2024
|
| Schlagworte: | |
| Online-Zugang: | |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| _version_ | 1866914942526947328 |
|---|---|
| author | Wakabayashi, Yuki K. Kobayashi, Masaki Seki, Yuichi Yamagami, Kohei Takeda, Takahito Ohkochi, Takuo Taniyasu, Yoshitaka Krockenberger, Yoshiharu Yamamoto, Hideki |
| author_facet | Wakabayashi, Yuki K. Kobayashi, Masaki Seki, Yuichi Yamagami, Kohei Takeda, Takahito Ohkochi, Takuo Taniyasu, Yoshitaka Krockenberger, Yoshiharu Yamamoto, Hideki |
| contents | The burgeoning fields of spintronics and topological electronics require materials possessing a unique combination of properties: ferromagnetism, metallicity, and chemical stability. SrRuO3 (SRO) stands out as a compelling candidate due to its exceptional combination of these attributes. However, understanding its behavior under tensile strain, especially its thickness-dependent changes, remains elusive. This study employs machine-learning-assisted molecular beam epitaxy to investigate SRO films with thicknesses from 1 to 10 nm. This work complements the existing focus on compressive-strained SRO, opening a new avenue for exploring its hitherto concealed potential. Using soft X-ray magnetic circular dichroism, we uncover an intriguing interplay between film thickness, electronic structure, and magnetic properties. Our key findings reveal an intensified localization of Ru 4d t2g-O 2p hybridized states at lower thicknesses, attributed to the weakened orbital hybridization. Furthermore, we find a progressive reduction of magnetic moments for both Ru and O ions as film thickness decreases. Notably, a non-ferromagnetic insulating state emerges at a critical thickness of 1 nm, marking a pivotal transition from the metallic ferromagnetic phase. These insights emphasize the importance of considering thickness-dependent properties when tailoring SRO for next-generation spintronic and topological electronic devices. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2404_05438 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | SrRuO3 under tensile strain: Thickness-dependent electronic and magnetic properties Wakabayashi, Yuki K. Kobayashi, Masaki Seki, Yuichi Yamagami, Kohei Takeda, Takahito Ohkochi, Takuo Taniyasu, Yoshitaka Krockenberger, Yoshiharu Yamamoto, Hideki Materials Science The burgeoning fields of spintronics and topological electronics require materials possessing a unique combination of properties: ferromagnetism, metallicity, and chemical stability. SrRuO3 (SRO) stands out as a compelling candidate due to its exceptional combination of these attributes. However, understanding its behavior under tensile strain, especially its thickness-dependent changes, remains elusive. This study employs machine-learning-assisted molecular beam epitaxy to investigate SRO films with thicknesses from 1 to 10 nm. This work complements the existing focus on compressive-strained SRO, opening a new avenue for exploring its hitherto concealed potential. Using soft X-ray magnetic circular dichroism, we uncover an intriguing interplay between film thickness, electronic structure, and magnetic properties. Our key findings reveal an intensified localization of Ru 4d t2g-O 2p hybridized states at lower thicknesses, attributed to the weakened orbital hybridization. Furthermore, we find a progressive reduction of magnetic moments for both Ru and O ions as film thickness decreases. Notably, a non-ferromagnetic insulating state emerges at a critical thickness of 1 nm, marking a pivotal transition from the metallic ferromagnetic phase. These insights emphasize the importance of considering thickness-dependent properties when tailoring SRO for next-generation spintronic and topological electronic devices. |
| title | SrRuO3 under tensile strain: Thickness-dependent electronic and magnetic properties |
| topic | Materials Science |
| url | https://arxiv.org/abs/2404.05438 |