Significant Photoluminescence Improvements from Bulk Germanium-Based Thin Films with Ultra-low Threading Dislocation Densities
Fuente:
arXiv
Salvato in:
| Autori principali: | , , , |
|---|---|
| Natura: | Preprint |
| Pubblicazione: |
2024
|
| Soggetti: | |
| Accesso online: | |
| Tags: |
Aggiungi Tag
Nessun Tag, puoi essere il primo ad aggiungerne!!
|
| _version_ | 1866929716346224640 |
|---|---|
| author | Wang, Liming Kassa, Gideon Liu, Jifeng Xia, Guangrui |
| author_facet | Wang, Liming Kassa, Gideon Liu, Jifeng Xia, Guangrui |
| contents | Bulk Ge crystals, characterized by significantly lower threading dislocation densities than their epitaxial counterparts, emerge as optimal candidates for studying and improving Ge laser performance. Our study focused on the Ge thickness and TDD impacts on Ge photoluminescence. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2404_05663 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Significant Photoluminescence Improvements from Bulk Germanium-Based Thin Films with Ultra-low Threading Dislocation Densities Wang, Liming Kassa, Gideon Liu, Jifeng Xia, Guangrui Materials Science Applied Physics Bulk Ge crystals, characterized by significantly lower threading dislocation densities than their epitaxial counterparts, emerge as optimal candidates for studying and improving Ge laser performance. Our study focused on the Ge thickness and TDD impacts on Ge photoluminescence. |
| title | Significant Photoluminescence Improvements from Bulk Germanium-Based Thin Films with Ultra-low Threading Dislocation Densities |
| topic | Materials Science Applied Physics |
| url | https://arxiv.org/abs/2404.05663 |