Salvato in:
Dettagli Bibliografici
Autori principali: Silva, Alison A., Andrade, Fabiano M., Caravelli, Francesco
Natura: Preprint
Pubblicazione: 2024
Soggetti:
Accesso online:https://arxiv.org/abs/2404.06628
Tags: Aggiungi Tag
Nessun Tag, puoi essere il primo ad aggiungerne!!
_version_ 1866909652698005504
author Silva, Alison A.
Andrade, Fabiano M.
Caravelli, Francesco
author_facet Silva, Alison A.
Andrade, Fabiano M.
Caravelli, Francesco
contents The formation of metallic nanofilaments bridging two electrodes across an insulator is a mechanism for resistive switching. Examples of such phenomena include atomic synapses, which constitute a distinct class of memristive devices whose behavior is closely tied to the properties of the filament. Until recently, experimental investigation of the low-temperature regime and quantum transport effects has been limited. However, with growing interest in understanding the true impacts of the filament on device conductance, comprehending quantum effects has become crucial for quantum neuromorphic hardware. We discuss quantum transport resulting from filamentary switching in a narrow region where the continuous approximation of the contact is not valid, and only a few atoms are involved. In this scenario, the filament can be represented by a graph depicting the adjacency of atoms and the overlap between atomic orbitals. Using quantum graphs, we calculate the scattering amplitude of charge carriers on this graph and explore the interplay between filamentary formation and quantum transport effects.
format Preprint
id arxiv_https___arxiv_org_abs_2404_06628
institution arXiv
publishDate 2024
record_format arxiv
spellingShingle Quantum graph models for transport in filamentary switching
Silva, Alison A.
Andrade, Fabiano M.
Caravelli, Francesco
Mesoscale and Nanoscale Physics
Disordered Systems and Neural Networks
Mathematical Physics
The formation of metallic nanofilaments bridging two electrodes across an insulator is a mechanism for resistive switching. Examples of such phenomena include atomic synapses, which constitute a distinct class of memristive devices whose behavior is closely tied to the properties of the filament. Until recently, experimental investigation of the low-temperature regime and quantum transport effects has been limited. However, with growing interest in understanding the true impacts of the filament on device conductance, comprehending quantum effects has become crucial for quantum neuromorphic hardware. We discuss quantum transport resulting from filamentary switching in a narrow region where the continuous approximation of the contact is not valid, and only a few atoms are involved. In this scenario, the filament can be represented by a graph depicting the adjacency of atoms and the overlap between atomic orbitals. Using quantum graphs, we calculate the scattering amplitude of charge carriers on this graph and explore the interplay between filamentary formation and quantum transport effects.
title Quantum graph models for transport in filamentary switching
topic Mesoscale and Nanoscale Physics
Disordered Systems and Neural Networks
Mathematical Physics
url https://arxiv.org/abs/2404.06628