Pressure-tuned many-body phases through $Γ$-K valleytronics in moiré bilayer WSe$_2$

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Main Authors: Brzezińska, Marta, Grytsiuk, Sergii, Rösner, Malte, Gibertini, Marco, Rademaker, Louk
Format: Preprint
Published: 2024
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author Brzezińska, Marta
Grytsiuk, Sergii
Rösner, Malte
Gibertini, Marco
Rademaker, Louk
author_facet Brzezińska, Marta
Grytsiuk, Sergii
Rösner, Malte
Gibertini, Marco
Rademaker, Louk
contents Recent experiments in twisted bilayer transition-metal dichalcogenides have revealed a variety of strongly correlated phenomena. To theoretically explore their origin, we combine here ab initio calculations with correlated model approaches to describe and study many-body effects in twisted bilayer WSe$_2$ under pressure. We find that the interlayer distance is a key factor for the electronic structure, as it tunes the relative energetic positions between the K and the $Γ$ valleys of the valence band maximum of the untwisted bilayer. As a result, applying uniaxial pressure to a twisted bilayer induces a charge-transfer from the K valley to the flat bands in the $Γ$ valley. Upon Wannierizing moiré bands from both valleys, we establish the relevant tight-binding model parameters and calculate the effective interaction strengths using the constrained random phase approximation. With this, we approximate the interacting pressure-doping phase diagram of WSe$_2$ moiré bilayers using self-consistent mean field theory. Our results establish twisted bilayer WSe$_2$ as a platform that allows the direct pressure-tuning of different correlated phases, ranging from Mott insulators, charge-valley-transfer insulators to Kondo lattice-like systems.
format Preprint
id arxiv_https___arxiv_org_abs_2404_07165
institution arXiv
publishDate 2024
record_format arxiv
spellingShingle Pressure-tuned many-body phases through $Γ$-K valleytronics in moiré bilayer WSe$_2$
Brzezińska, Marta
Grytsiuk, Sergii
Rösner, Malte
Gibertini, Marco
Rademaker, Louk
Strongly Correlated Electrons
Mesoscale and Nanoscale Physics
Materials Science
Recent experiments in twisted bilayer transition-metal dichalcogenides have revealed a variety of strongly correlated phenomena. To theoretically explore their origin, we combine here ab initio calculations with correlated model approaches to describe and study many-body effects in twisted bilayer WSe$_2$ under pressure. We find that the interlayer distance is a key factor for the electronic structure, as it tunes the relative energetic positions between the K and the $Γ$ valleys of the valence band maximum of the untwisted bilayer. As a result, applying uniaxial pressure to a twisted bilayer induces a charge-transfer from the K valley to the flat bands in the $Γ$ valley. Upon Wannierizing moiré bands from both valleys, we establish the relevant tight-binding model parameters and calculate the effective interaction strengths using the constrained random phase approximation. With this, we approximate the interacting pressure-doping phase diagram of WSe$_2$ moiré bilayers using self-consistent mean field theory. Our results establish twisted bilayer WSe$_2$ as a platform that allows the direct pressure-tuning of different correlated phases, ranging from Mott insulators, charge-valley-transfer insulators to Kondo lattice-like systems.
title Pressure-tuned many-body phases through $Γ$-K valleytronics in moiré bilayer WSe$_2$
topic Strongly Correlated Electrons
Mesoscale and Nanoscale Physics
Materials Science
url https://arxiv.org/abs/2404.07165