Two-dimensional Semiconductor Computational Carrier Mobility Genome
Fuente:
arXiv
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| Autori principali: | , |
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| Natura: | Preprint |
| Pubblicazione: |
2024
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| _version_ | 1866916202548297728 |
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| author | Zhang, Chenmu Liu, Yuanyue |
| author_facet | Zhang, Chenmu Liu, Yuanyue |
| contents | Two-dimensional (2D) crystalline semiconductors hold promise for next-generation electronic devices due to its atomical thickness and consequent properties. Despite years of search, literature-reported 2D semiconductors commonly suffered from low room-temperature charge mobility (< 200 cm2V-1s-1), due to the dimensionality-increased 'density of scattering', undesirable defects during fabrication and/or strong electron-phonon scattering. Therefore, understanding charge scatterings in 2D semiconductors via computational tools and discovering new 2D semiconductors with high mobility (> 1000 cm2V-1s-1) are both desirable. Here we review the accurate ab initio approaches for electron-phonon/defect/boundary scattering developed these years, and the efforts made in high-mobility 2D semiconductor high throughput screening. Starting from these studies, the common genome of high-mobility 2D semiconductor are summarized and discussed, which would contribute to further discovering of high mobility in 2D semiconductors. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2404_08117 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Two-dimensional Semiconductor Computational Carrier Mobility Genome Zhang, Chenmu Liu, Yuanyue Materials Science Two-dimensional (2D) crystalline semiconductors hold promise for next-generation electronic devices due to its atomical thickness and consequent properties. Despite years of search, literature-reported 2D semiconductors commonly suffered from low room-temperature charge mobility (< 200 cm2V-1s-1), due to the dimensionality-increased 'density of scattering', undesirable defects during fabrication and/or strong electron-phonon scattering. Therefore, understanding charge scatterings in 2D semiconductors via computational tools and discovering new 2D semiconductors with high mobility (> 1000 cm2V-1s-1) are both desirable. Here we review the accurate ab initio approaches for electron-phonon/defect/boundary scattering developed these years, and the efforts made in high-mobility 2D semiconductor high throughput screening. Starting from these studies, the common genome of high-mobility 2D semiconductor are summarized and discussed, which would contribute to further discovering of high mobility in 2D semiconductors. |
| title | Two-dimensional Semiconductor Computational Carrier Mobility Genome |
| topic | Materials Science |
| url | https://arxiv.org/abs/2404.08117 |