Solid-State Electrochemical Thermal Transistors with Large Thermal Conductivity Switching Widths
Fuente:
arXiv
Gespeichert in:
| Hauptverfasser: | , , , , , , , , |
|---|---|
| Format: | Preprint |
| Veröffentlicht: |
2024
|
| Schlagworte: | |
| Online-Zugang: | |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| _version_ | 1866910507323097088 |
|---|---|
| author | Bian, Zhiping Yoshimura, Mitsuki Jeong, Ahrong Li, Haobo Endo, Takashi Matsuo, Yasutaka Magari, Yusaku Tanaka, Hidekazu Ohta, Hiromichi |
| author_facet | Bian, Zhiping Yoshimura, Mitsuki Jeong, Ahrong Li, Haobo Endo, Takashi Matsuo, Yasutaka Magari, Yusaku Tanaka, Hidekazu Ohta, Hiromichi |
| contents | Thermal transistors that switch the thermal conductivity (\k{appa}) of the active layers are attracting increasing attention as thermal management devices. For electrochemical thermal transistors, several transition metal oxides (TMOs) have been proposed as active layers. After electrochemical redox treatment, the crystal structure of the TMO is modulated, which results in the \k{appa} switching. However, the \k{appa} switching width is still small (< 4 W/mK). In this study, we demonstrate that LaNiOx-based solid-state electrochemical thermal transistors have a \k{appa} switching width of 4.3 W/mK. Fully oxidised LaNiO3 (on state) has a \k{appa} of 6.0 W/mK due to the large contribution of electron thermal conductivity (\k{appa}ele, 3.1 W/mK). In contrast, reduced LaNiO2.72 (off state) has a \k{appa} of 1.7 W/mK because the phonons are scattered by the oxygen vacancies. The LaNiOx-based electrochemical thermal transistor exhibits excellent cyclability of \k{appa} and the crystalline lattice of LaNiOx. This electrochemical thermal transistor may be a promising platform for next-generation devices such as thermal displays. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2404_08307 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Solid-State Electrochemical Thermal Transistors with Large Thermal Conductivity Switching Widths Bian, Zhiping Yoshimura, Mitsuki Jeong, Ahrong Li, Haobo Endo, Takashi Matsuo, Yasutaka Magari, Yusaku Tanaka, Hidekazu Ohta, Hiromichi Materials Science Thermal transistors that switch the thermal conductivity (\k{appa}) of the active layers are attracting increasing attention as thermal management devices. For electrochemical thermal transistors, several transition metal oxides (TMOs) have been proposed as active layers. After electrochemical redox treatment, the crystal structure of the TMO is modulated, which results in the \k{appa} switching. However, the \k{appa} switching width is still small (< 4 W/mK). In this study, we demonstrate that LaNiOx-based solid-state electrochemical thermal transistors have a \k{appa} switching width of 4.3 W/mK. Fully oxidised LaNiO3 (on state) has a \k{appa} of 6.0 W/mK due to the large contribution of electron thermal conductivity (\k{appa}ele, 3.1 W/mK). In contrast, reduced LaNiO2.72 (off state) has a \k{appa} of 1.7 W/mK because the phonons are scattered by the oxygen vacancies. The LaNiOx-based electrochemical thermal transistor exhibits excellent cyclability of \k{appa} and the crystalline lattice of LaNiOx. This electrochemical thermal transistor may be a promising platform for next-generation devices such as thermal displays. |
| title | Solid-State Electrochemical Thermal Transistors with Large Thermal Conductivity Switching Widths |
| topic | Materials Science |
| url | https://arxiv.org/abs/2404.08307 |