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| Natura: | Preprint |
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2024
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| Accesso online: | https://arxiv.org/abs/2404.08962 |
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| _version_ | 1866929391714435072 |
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| author | Zhang, Xian-Peng |
| author_facet | Zhang, Xian-Peng |
| contents | Superconducting diode effects (SDEs) occur in systems with asymmetric critical supercurrents $|I^c_+|\neq |I^c_-|$ yielding dissipationless flow in one direction $(e.g., +)$, while dissipative transport in the opposite direction $(-)$. Here we investigate the SDE in a phase-biased $ϕ$ Josephson junction with a double-barrier resonant-tunneling InAs nanowire nested between proximitized InAs/Al leads with finite momentum $\hbar q$ Cooper pairing. Within the Bogoliubov-de Gennes (BdG) approach, we obtain the exact BCS ground state energy $\mathcal{E}_G(q,ϕ)$ and $I^{c}_{+} \neq |I^{c}_{-}|$ from the current-phase relation $I_G(q,ϕ) \sim \partial_ϕ\mathcal{E}_G(q,ϕ)$. The SDE arises from the accrued Andreev phase shifts $δϕ_{L,R}(q,ϕ)$ leading to asymmetric BdG spectra for $q\neq 0$. Remarkably, the diode efficiency $γ=(I^{c}_{+} - |I^{c}_{-}|)/(I^{c}_{+} + |I^{c}_{-}|)$ shows multiple Fabry-Perot resonances $γ\simeq 26\%$ at the double-barrier Andreev bound states as the well depth $V_g$ is varied. Our $γ$ also features sign reversals for increasing $q$ and high sensitiveness to fermion-parity transitions. The latter enables $I^{c}_{+} (ϕ_+)\rightleftarrows I^{c}_{-}(ϕ_-)$ switchings over narrow phase windows, i.e., $ϕ_+, ϕ_- \in Δϕ\llπ$, possibly relevant for future superconducting electronics. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2404_08962 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Fabry-Perot superconducting diode Zhang, Xian-Peng Superconductivity Superconducting diode effects (SDEs) occur in systems with asymmetric critical supercurrents $|I^c_+|\neq |I^c_-|$ yielding dissipationless flow in one direction $(e.g., +)$, while dissipative transport in the opposite direction $(-)$. Here we investigate the SDE in a phase-biased $ϕ$ Josephson junction with a double-barrier resonant-tunneling InAs nanowire nested between proximitized InAs/Al leads with finite momentum $\hbar q$ Cooper pairing. Within the Bogoliubov-de Gennes (BdG) approach, we obtain the exact BCS ground state energy $\mathcal{E}_G(q,ϕ)$ and $I^{c}_{+} \neq |I^{c}_{-}|$ from the current-phase relation $I_G(q,ϕ) \sim \partial_ϕ\mathcal{E}_G(q,ϕ)$. The SDE arises from the accrued Andreev phase shifts $δϕ_{L,R}(q,ϕ)$ leading to asymmetric BdG spectra for $q\neq 0$. Remarkably, the diode efficiency $γ=(I^{c}_{+} - |I^{c}_{-}|)/(I^{c}_{+} + |I^{c}_{-}|)$ shows multiple Fabry-Perot resonances $γ\simeq 26\%$ at the double-barrier Andreev bound states as the well depth $V_g$ is varied. Our $γ$ also features sign reversals for increasing $q$ and high sensitiveness to fermion-parity transitions. The latter enables $I^{c}_{+} (ϕ_+)\rightleftarrows I^{c}_{-}(ϕ_-)$ switchings over narrow phase windows, i.e., $ϕ_+, ϕ_- \in Δϕ\llπ$, possibly relevant for future superconducting electronics. |
| title | Fabry-Perot superconducting diode |
| topic | Superconductivity |
| url | https://arxiv.org/abs/2404.08962 |