Cheng, Z., Ji, X., Huang, Z., Ohno, Y., Inoue, K., Nagai, Y., . . . Liang, J. (2024). Interfacial reaction boosts thermal conductance of room-temperature integrated semiconductor interfaces stable up to 1100 C.
Style de citation Chicago (17e éd.)Cheng, Zhe, et al. Interfacial Reaction Boosts Thermal Conductance of Room-temperature Integrated Semiconductor Interfaces Stable Up to 1100 C. 2024.
Style de citation MLA (9e éd.)Cheng, Zhe, et al. Interfacial Reaction Boosts Thermal Conductance of Room-temperature Integrated Semiconductor Interfaces Stable Up to 1100 C. 2024.
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