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Interfacial reaction boosts thermal conductance of room-temperature integrated semiconductor interfaces stable up to 1100 C

Fuente: arXiv

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Détails bibliographiques
Auteurs principaux:	Cheng, Zhe, Ji, Xiaoyang, Huang, Zifeng, Ohno, Yutaka, Inoue, Koji, Nagai, Yasusyohi, Sakaida, Yoshiki, Uratani, Hiroki, Shigekawa, Naoteru, Liang, Jianbo
Format:	Preprint
Publié:	2024
Sujets:	Mesoscale and Nanoscale Physics
Accès en ligne:	Acceder al recurso
Tags:	Ajouter un tag Pas de tags, Soyez le premier à ajouter un tag!

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