Interfacial reaction boosts thermal conductance of room-temperature integrated semiconductor interfaces stable up to 1100 C

Fuente: arXiv
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Bibliographic Details
Main Authors: Cheng, Zhe, Ji, Xiaoyang, Huang, Zifeng, Ohno, Yutaka, Inoue, Koji, Nagai, Yasusyohi, Sakaida, Yoshiki, Uratani, Hiroki, Shigekawa, Naoteru, Liang, Jianbo
Format: Preprint
Published: 2024
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