Coexistence of interacting charge density waves in a layered semiconductor

Fuente: arXiv
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Auteurs principaux: Lv, B. Q., Zong, Alfred, Wu, Dong, Nie, Zhengwei, Su, Yifan, Choi, Dongsung, Ilyas, Batyr, Fichera, Bryan T., Li, Jiarui, Baldini, Edoardo, Mogi, Masataka, Huang, Y. -B., Po, Hoi Chun, Meng, Sheng, Wang, Yao, Wang, N. L., Gedik, Nuh
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Publié: 2024
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author Lv, B. Q.
Zong, Alfred
Wu, Dong
Nie, Zhengwei
Su, Yifan
Choi, Dongsung
Ilyas, Batyr
Fichera, Bryan T.
Li, Jiarui
Baldini, Edoardo
Mogi, Masataka
Huang, Y. -B.
Po, Hoi Chun
Meng, Sheng
Wang, Yao
Wang, N. L.
Gedik, Nuh
author_facet Lv, B. Q.
Zong, Alfred
Wu, Dong
Nie, Zhengwei
Su, Yifan
Choi, Dongsung
Ilyas, Batyr
Fichera, Bryan T.
Li, Jiarui
Baldini, Edoardo
Mogi, Masataka
Huang, Y. -B.
Po, Hoi Chun
Meng, Sheng
Wang, Yao
Wang, N. L.
Gedik, Nuh
contents Coexisting orders are key features of strongly correlated materials and underlie many intriguing phenomena from unconventional superconductivity to topological orders. Here, we report the coexistence of two interacting charge-density-wave (CDW) orders in EuTe4, a layered crystal that has drawn considerable attention owing to its anomalous thermal hysteresis and a semiconducting CDW state despite the absence of perfect FS nesting. By accessing unoccupied conduction bands with time- and angle-resolved photoemission measurements, we find that mono- and bi-layers of Te in the unit cell host different CDWs that are associated with distinct energy gaps. The two gaps display dichotomous evolutions following photoexcitation, where the larger bilayer CDW gap exhibits less renormalization and faster recovery. Surprisingly, the CDW in the Te monolayer displays an additional momentum-dependent gap renormalization that cannot be captured by density-functional theory calculations. This phenomenon is attributed to interlayer interactions between the two CDW orders, which account for the semiconducting nature of the equilibrium state. Our findings not only offer microscopic insights into the correlated ground state of EuTe4 but also provide a general non-equilibrium approach to understand coexisting, layer-dependent orders in a complex system.
format Preprint
id arxiv_https___arxiv_org_abs_2404_09182
institution arXiv
publishDate 2024
record_format arxiv
spellingShingle Coexistence of interacting charge density waves in a layered semiconductor
Lv, B. Q.
Zong, Alfred
Wu, Dong
Nie, Zhengwei
Su, Yifan
Choi, Dongsung
Ilyas, Batyr
Fichera, Bryan T.
Li, Jiarui
Baldini, Edoardo
Mogi, Masataka
Huang, Y. -B.
Po, Hoi Chun
Meng, Sheng
Wang, Yao
Wang, N. L.
Gedik, Nuh
Strongly Correlated Electrons
Materials Science
Coexisting orders are key features of strongly correlated materials and underlie many intriguing phenomena from unconventional superconductivity to topological orders. Here, we report the coexistence of two interacting charge-density-wave (CDW) orders in EuTe4, a layered crystal that has drawn considerable attention owing to its anomalous thermal hysteresis and a semiconducting CDW state despite the absence of perfect FS nesting. By accessing unoccupied conduction bands with time- and angle-resolved photoemission measurements, we find that mono- and bi-layers of Te in the unit cell host different CDWs that are associated with distinct energy gaps. The two gaps display dichotomous evolutions following photoexcitation, where the larger bilayer CDW gap exhibits less renormalization and faster recovery. Surprisingly, the CDW in the Te monolayer displays an additional momentum-dependent gap renormalization that cannot be captured by density-functional theory calculations. This phenomenon is attributed to interlayer interactions between the two CDW orders, which account for the semiconducting nature of the equilibrium state. Our findings not only offer microscopic insights into the correlated ground state of EuTe4 but also provide a general non-equilibrium approach to understand coexisting, layer-dependent orders in a complex system.
title Coexistence of interacting charge density waves in a layered semiconductor
topic Strongly Correlated Electrons
Materials Science
url https://arxiv.org/abs/2404.09182