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Main Authors: Wang, Chao, Zhang, Peipei, Li, Yu-Xian, Song, Juntao
Format: Preprint
Published: 2024
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Online Access:https://arxiv.org/abs/2404.09407
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_version_ 1866911839350161408
author Wang, Chao
Zhang, Peipei
Li, Yu-Xian
Song, Juntao
author_facet Wang, Chao
Zhang, Peipei
Li, Yu-Xian
Song, Juntao
contents Using the tight-binding model, a multi-terminal superconductor(S) device is proposed, where the structures of the center region are primitive grpahene(G) and Y-shaped Kekulé graphene superlattice(GS), respectively. The intravalley Andreev reflection is studied in this model through the utilization of the non-equilibrium Green's function method. In the G/S device, due to the time-reverse symmetry the dominant process of Andreev reflection is intervalley reflection. In a three-terminal GS/S device, it has been observed that the coefficient of intravalley Andreev reflection can surpass that of intervalley reflection in crossed Andreev reflection. This is attributed to the coupling between valleys K and -K within the first Brillouin zone, resulting in enhanced intervalley scattering. The valley-dependent transport of Andreev reflection can be influenced by the phase difference between superconductor terminals. The valley polarization of the local Andreev reflection and the crossed Andreev reflection could be controlled by adjusting the structure of the central region.
format Preprint
id arxiv_https___arxiv_org_abs_2404_09407
institution arXiv
publishDate 2024
record_format arxiv
spellingShingle Intravalley Andreev reflection in the multi-terminal device with Y-shaped Kekulé graphene superlattices
Wang, Chao
Zhang, Peipei
Li, Yu-Xian
Song, Juntao
Mesoscale and Nanoscale Physics
Using the tight-binding model, a multi-terminal superconductor(S) device is proposed, where the structures of the center region are primitive grpahene(G) and Y-shaped Kekulé graphene superlattice(GS), respectively. The intravalley Andreev reflection is studied in this model through the utilization of the non-equilibrium Green's function method. In the G/S device, due to the time-reverse symmetry the dominant process of Andreev reflection is intervalley reflection. In a three-terminal GS/S device, it has been observed that the coefficient of intravalley Andreev reflection can surpass that of intervalley reflection in crossed Andreev reflection. This is attributed to the coupling between valleys K and -K within the first Brillouin zone, resulting in enhanced intervalley scattering. The valley-dependent transport of Andreev reflection can be influenced by the phase difference between superconductor terminals. The valley polarization of the local Andreev reflection and the crossed Andreev reflection could be controlled by adjusting the structure of the central region.
title Intravalley Andreev reflection in the multi-terminal device with Y-shaped Kekulé graphene superlattices
topic Mesoscale and Nanoscale Physics
url https://arxiv.org/abs/2404.09407