Van der Waals epitaxy of Weyl-semimetal Td-WTe$_2$
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2024
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| author | Llopez, Alexandre Leroy, Frédéric Tagne-Kaegom, Calvin Croes, Boris Michon, Adrien Mastropasqua, Chiara Khalfioui, Mohamed Al Curiotto, Stefano Müller, Pierre Saùl, Andrés Kierren, Bertrand Kremer, Geoffroy Fèvre, Patrick Le Bertran, François Fagot-Revurat, Yannick Cheynis, Fabien |
| author_facet | Llopez, Alexandre Leroy, Frédéric Tagne-Kaegom, Calvin Croes, Boris Michon, Adrien Mastropasqua, Chiara Khalfioui, Mohamed Al Curiotto, Stefano Müller, Pierre Saùl, Andrés Kierren, Bertrand Kremer, Geoffroy Fèvre, Patrick Le Bertran, François Fagot-Revurat, Yannick Cheynis, Fabien |
| contents | Epitaxial growth of WTe$_2$ offers significant advantages, including the production of high-qualityfilms, possible long range in-plane ordering and precise control over layer thicknesses. However,the mean island size of WTe$_2$ grown by molecular beam epitaxy (MBE) in litterature is only a fewtens of nanometers, which is not suitable for an implementation of devices at large lateral scales.Here we report the growth of Td-WTe$_2$ ultrathin films by MBE on monolayer (ML) graphenereaching a mean flake size of $\cong$110nm, which is, on overage, more than three time larger thanprevious results. WTe$_2$ films thicker than 5nm have been successfully synthesized and exhibit theexpected Td-phase atomic structure. We rationalize epitaxial growth of Td-WTe$_2$ and propose asimple model to estimate the mean flake size as a function of growth parameters that can be appliedto other transition metal dichalcogenides (TMDCs). Based on nucleation theory and Kolmogorov-Johnson-Meh-Avrami (KJMA) equation, our analytical model supports experimental data showinga critical coverage of 0.13ML above which WTe$_2$ nucleation becomes negligible. The quality ofmonolayer WTe$_2$ films is demonstrated from electronic band structure analysis using angle-resolved photoemission spectroscopy (ARPES) in agreement with first-principle calculationsperformed on free-standing WTe$_2$ and previous reports. |
| format | Preprint |
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arxiv_https___arxiv_org_abs_2404_09543 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Van der Waals epitaxy of Weyl-semimetal Td-WTe$_2$ Llopez, Alexandre Leroy, Frédéric Tagne-Kaegom, Calvin Croes, Boris Michon, Adrien Mastropasqua, Chiara Khalfioui, Mohamed Al Curiotto, Stefano Müller, Pierre Saùl, Andrés Kierren, Bertrand Kremer, Geoffroy Fèvre, Patrick Le Bertran, François Fagot-Revurat, Yannick Cheynis, Fabien Materials Science Epitaxial growth of WTe$_2$ offers significant advantages, including the production of high-qualityfilms, possible long range in-plane ordering and precise control over layer thicknesses. However,the mean island size of WTe$_2$ grown by molecular beam epitaxy (MBE) in litterature is only a fewtens of nanometers, which is not suitable for an implementation of devices at large lateral scales.Here we report the growth of Td-WTe$_2$ ultrathin films by MBE on monolayer (ML) graphenereaching a mean flake size of $\cong$110nm, which is, on overage, more than three time larger thanprevious results. WTe$_2$ films thicker than 5nm have been successfully synthesized and exhibit theexpected Td-phase atomic structure. We rationalize epitaxial growth of Td-WTe$_2$ and propose asimple model to estimate the mean flake size as a function of growth parameters that can be appliedto other transition metal dichalcogenides (TMDCs). Based on nucleation theory and Kolmogorov-Johnson-Meh-Avrami (KJMA) equation, our analytical model supports experimental data showinga critical coverage of 0.13ML above which WTe$_2$ nucleation becomes negligible. The quality ofmonolayer WTe$_2$ films is demonstrated from electronic band structure analysis using angle-resolved photoemission spectroscopy (ARPES) in agreement with first-principle calculationsperformed on free-standing WTe$_2$ and previous reports. |
| title | Van der Waals epitaxy of Weyl-semimetal Td-WTe$_2$ |
| topic | Materials Science |
| url | https://arxiv.org/abs/2404.09543 |