On the experimental properties of the TS defect in 4H-SiC

Fuente: arXiv

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Bibliographic Details
Main Authors:	Lehmeyer, Johannes A. F., Fuchs, Alexander D., Li, Zhengming, Bornträger, Titus, Candolfi, Fabio, Schober, Maximilian, Fischer, Marcus, Hartmann, Martin, Neu, Elke, Bockstedte, Michel, Krieger, Michael, Weber, Heiko B.
Format:	Preprint
Published:	2024
Subjects:	Applied Physics
Online Access:	Acceder al recurso
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Internet

https://arxiv.org/abs/2404.09618