Spin Hall Nano-Oscillator Empirical Electrical Model for Optimal On-chip Detector Design
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arXiv
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| Autores principales: | , , , , , , , , , |
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| Formato: | Preprint |
| Publicado: |
2024
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| _version_ | 1866929631418908672 |
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| author | Fiorelli, Rafaella Rajabali, Mona Méndez-Romero, Roberto Kumar, Akash Litvinenko, Artem Serrano-Gotarredona, Teresa Moradi, Farshad Åkerman, Johan Linares-Barranco, Bernabé Peralías, Eduardo |
| author_facet | Fiorelli, Rafaella Rajabali, Mona Méndez-Romero, Roberto Kumar, Akash Litvinenko, Artem Serrano-Gotarredona, Teresa Moradi, Farshad Åkerman, Johan Linares-Barranco, Bernabé Peralías, Eduardo |
| contents | As nascent nonlinear oscillators, nano-constriction spin Hall nano-oscillators (SHNOs) represent a promising potential for integration into more complicated systems such as neural networks, magnetic field sensors, and radio frequency (RF) signal classification, their tunable high-frequency operating regime, easy synchronization, and CMOS compatibility can streamline the process. To implement SHNOs in any of these networks, the electrical features of a single device are needed before designing the signal detection CMOS circuitry. This study centers on presenting an empirical electrical model of the SHNO based on a comprehensive characterization of the output impedance of a single SHNO, and its available output power in the range of 2-10 GHz at various bias currents. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2404_10334 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Spin Hall Nano-Oscillator Empirical Electrical Model for Optimal On-chip Detector Design Fiorelli, Rafaella Rajabali, Mona Méndez-Romero, Roberto Kumar, Akash Litvinenko, Artem Serrano-Gotarredona, Teresa Moradi, Farshad Åkerman, Johan Linares-Barranco, Bernabé Peralías, Eduardo Mesoscale and Nanoscale Physics Materials Science Applied Physics As nascent nonlinear oscillators, nano-constriction spin Hall nano-oscillators (SHNOs) represent a promising potential for integration into more complicated systems such as neural networks, magnetic field sensors, and radio frequency (RF) signal classification, their tunable high-frequency operating regime, easy synchronization, and CMOS compatibility can streamline the process. To implement SHNOs in any of these networks, the electrical features of a single device are needed before designing the signal detection CMOS circuitry. This study centers on presenting an empirical electrical model of the SHNO based on a comprehensive characterization of the output impedance of a single SHNO, and its available output power in the range of 2-10 GHz at various bias currents. |
| title | Spin Hall Nano-Oscillator Empirical Electrical Model for Optimal On-chip Detector Design |
| topic | Mesoscale and Nanoscale Physics Materials Science Applied Physics |
| url | https://arxiv.org/abs/2404.10334 |