Roles of band gap and Kane electronic dispersion in the THz-frequency nonlinear optical response in HgCdTe

Fuente: arXiv
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Autores principales: Soranzio, Davide, Abreu, Elsa, Houver, Sarah, Dössegger, Janine, Savoini, Matteo, Teppe, Frédéric, Krishtopenko, Sergey, Mikhailov, Nikolay N., Dvoretsky, Sergey A., Johnson, Steven L.
Formato: Preprint
Publicado: 2024
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author Soranzio, Davide
Abreu, Elsa
Houver, Sarah
Dössegger, Janine
Savoini, Matteo
Teppe, Frédéric
Krishtopenko, Sergey
Mikhailov, Nikolay N.
Dvoretsky, Sergey A.
Johnson, Steven L.
author_facet Soranzio, Davide
Abreu, Elsa
Houver, Sarah
Dössegger, Janine
Savoini, Matteo
Teppe, Frédéric
Krishtopenko, Sergey
Mikhailov, Nikolay N.
Dvoretsky, Sergey A.
Johnson, Steven L.
contents Materials with linear electronic dispersion often feature high carrier mobilities and unusually strong nonlinear optical interactions. In this work, we investigate the THz nonlinear dynamics of one such material, HgCdTe, with an electronic band dispersion heavily dependent on both temperature and stoichiometry. We show how the band gap, carrier concentration and band shape together determine the nonlinear response of the system. At low temperatures, carrier generation from Zener tunneling dominates the nonlinear response with a reduction in the overall transmission. At room temperature, quasi-ballistic electronic dynamics drive the largest observed nonlinear optical interactions, leading to a transmission increase. Our results demonstrate the sensitivity of these nonlinear optical properties of narrow-gap materials to small changes in the electronic dispersion and carrier concentration.
format Preprint
id arxiv_https___arxiv_org_abs_2404_10582
institution arXiv
publishDate 2024
record_format arxiv
spellingShingle Roles of band gap and Kane electronic dispersion in the THz-frequency nonlinear optical response in HgCdTe
Soranzio, Davide
Abreu, Elsa
Houver, Sarah
Dössegger, Janine
Savoini, Matteo
Teppe, Frédéric
Krishtopenko, Sergey
Mikhailov, Nikolay N.
Dvoretsky, Sergey A.
Johnson, Steven L.
Materials Science
Materials with linear electronic dispersion often feature high carrier mobilities and unusually strong nonlinear optical interactions. In this work, we investigate the THz nonlinear dynamics of one such material, HgCdTe, with an electronic band dispersion heavily dependent on both temperature and stoichiometry. We show how the band gap, carrier concentration and band shape together determine the nonlinear response of the system. At low temperatures, carrier generation from Zener tunneling dominates the nonlinear response with a reduction in the overall transmission. At room temperature, quasi-ballistic electronic dynamics drive the largest observed nonlinear optical interactions, leading to a transmission increase. Our results demonstrate the sensitivity of these nonlinear optical properties of narrow-gap materials to small changes in the electronic dispersion and carrier concentration.
title Roles of band gap and Kane electronic dispersion in the THz-frequency nonlinear optical response in HgCdTe
topic Materials Science
url https://arxiv.org/abs/2404.10582