Transverse Inscription of Silicon Waveguides by Picosecond Laser Pulses

Fuente: arXiv
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Auteurs principaux: Blothe, Markus, Alberucci, Alessandro, Alasgarzade, Namig, Chambonneau, Maxime, Nolte, Stefan
Format: Preprint
Publié: 2024
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author Blothe, Markus
Alberucci, Alessandro
Alasgarzade, Namig
Chambonneau, Maxime
Nolte, Stefan
author_facet Blothe, Markus
Alberucci, Alessandro
Alasgarzade, Namig
Chambonneau, Maxime
Nolte, Stefan
contents In this paper, picosecond laser inscription of segmented waveguides in crystalline silicon based on a deterministic single-pulse modification process is demonstrated.Pulses of 43 ps duration at 1.55 $μ$m wavelength are used to transversely inscribe periodic structures with a pulse-to-pulse pitch of around 2 $μ$m. Infrared shadowgraphy images and Raman spectroscopy measurements indicate that the modifications exhibit a spherical shape. Characterization of waveguide performance at 1.55 $μ$m for various pulse energies and periods is carried out. Direct comparison with numerical simulations confirms the presence of graded index waveguides, encompassing a micrometer core size and a maximum refractive index change of around $7\times 10^{-3}$. This short-pulse inscription approach can pave the way for three-dimensional integrated photonic devices in the bulk of silicon.
format Preprint
id arxiv_https___arxiv_org_abs_2404_11187
institution arXiv
publishDate 2024
record_format arxiv
spellingShingle Transverse Inscription of Silicon Waveguides by Picosecond Laser Pulses
Blothe, Markus
Alberucci, Alessandro
Alasgarzade, Namig
Chambonneau, Maxime
Nolte, Stefan
Optics
Applied Physics
In this paper, picosecond laser inscription of segmented waveguides in crystalline silicon based on a deterministic single-pulse modification process is demonstrated.Pulses of 43 ps duration at 1.55 $μ$m wavelength are used to transversely inscribe periodic structures with a pulse-to-pulse pitch of around 2 $μ$m. Infrared shadowgraphy images and Raman spectroscopy measurements indicate that the modifications exhibit a spherical shape. Characterization of waveguide performance at 1.55 $μ$m for various pulse energies and periods is carried out. Direct comparison with numerical simulations confirms the presence of graded index waveguides, encompassing a micrometer core size and a maximum refractive index change of around $7\times 10^{-3}$. This short-pulse inscription approach can pave the way for three-dimensional integrated photonic devices in the bulk of silicon.
title Transverse Inscription of Silicon Waveguides by Picosecond Laser Pulses
topic Optics
Applied Physics
url https://arxiv.org/abs/2404.11187