Anisotropic Nonsaturating Magnetoresistance Observed in HoMn$_6$Ge$_6$: A Kagome Dirac Semimetal

Fuente: arXiv
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Autori principali: Low, Achintya, Bhowmik, Tushar Kanti, Ghosh, Susanta, Thirupathaiah, Setti
Natura: Preprint
Pubblicazione: 2024
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author Low, Achintya
Bhowmik, Tushar Kanti
Ghosh, Susanta
Thirupathaiah, Setti
author_facet Low, Achintya
Bhowmik, Tushar Kanti
Ghosh, Susanta
Thirupathaiah, Setti
contents We report the magnetic and magnetotransport properties and electronic band structure of the kagome Dirac semimetal HoMn$_6$Ge$_6$. Temperature-dependent electrical resistivity demonstrates various magnetic-transition-driven anomalies. Notably, a crossover from negative to positive magnetoresistance (MR) is observed at around 150 K. While the linear nonsaturating positive MR in the low-temperature region is mainly driven by the linear Dirac-like band dispersions as predicted by the first-principles calculations, the negative MR observed in the high-temperature region is due to the spin-flop type magnetic transition. Consistent with anisotropic Fermi surface topology, we observe anisotropic magnetoresistance at low temperatures. A significant anomalous Hall effect has been noticed at high temperatures in addition to a switching of the dominant charge carrier from electron to hole at around 215 K.
format Preprint
id arxiv_https___arxiv_org_abs_2404_11414
institution arXiv
publishDate 2024
record_format arxiv
spellingShingle Anisotropic Nonsaturating Magnetoresistance Observed in HoMn$_6$Ge$_6$: A Kagome Dirac Semimetal
Low, Achintya
Bhowmik, Tushar Kanti
Ghosh, Susanta
Thirupathaiah, Setti
Materials Science
Strongly Correlated Electrons
We report the magnetic and magnetotransport properties and electronic band structure of the kagome Dirac semimetal HoMn$_6$Ge$_6$. Temperature-dependent electrical resistivity demonstrates various magnetic-transition-driven anomalies. Notably, a crossover from negative to positive magnetoresistance (MR) is observed at around 150 K. While the linear nonsaturating positive MR in the low-temperature region is mainly driven by the linear Dirac-like band dispersions as predicted by the first-principles calculations, the negative MR observed in the high-temperature region is due to the spin-flop type magnetic transition. Consistent with anisotropic Fermi surface topology, we observe anisotropic magnetoresistance at low temperatures. A significant anomalous Hall effect has been noticed at high temperatures in addition to a switching of the dominant charge carrier from electron to hole at around 215 K.
title Anisotropic Nonsaturating Magnetoresistance Observed in HoMn$_6$Ge$_6$: A Kagome Dirac Semimetal
topic Materials Science
Strongly Correlated Electrons
url https://arxiv.org/abs/2404.11414