Wavelength-accurate and wafer-scale process for nonlinear frequency mixers in thin-film lithium niobate

Fuente: arXiv
Saved in:
Bibliographic Details
Main Authors: Xin, C. J., Lu, Shengyuan, Yang, Jiayu, Shams-Ansari, Amirhassan, Desiatov, Boris, Magalhães, Letícia S., Ghosh, Soumya S., McGee, Erin, Renaud, Dylan, Achuthan, Nicholas, Zvyagintsev, Arseniy, Barton III, David, Sinclair, Neil, Lončar, Marko
Format: Preprint
Published: 2024
Subjects:
Online Access:
Tags: Add Tag
No Tags, Be the first to tag this record!
_version_ 1866909567713017856
author Xin, C. J.
Lu, Shengyuan
Yang, Jiayu
Shams-Ansari, Amirhassan
Desiatov, Boris
Magalhães, Letícia S.
Ghosh, Soumya S.
McGee, Erin
Renaud, Dylan
Achuthan, Nicholas
Zvyagintsev, Arseniy
Barton III, David
Sinclair, Neil
Lončar, Marko
author_facet Xin, C. J.
Lu, Shengyuan
Yang, Jiayu
Shams-Ansari, Amirhassan
Desiatov, Boris
Magalhães, Letícia S.
Ghosh, Soumya S.
McGee, Erin
Renaud, Dylan
Achuthan, Nicholas
Zvyagintsev, Arseniy
Barton III, David
Sinclair, Neil
Lončar, Marko
contents Recent advancements in thin-film lithium niobate (TFLN) photonics have led to a new generation of high-performance electro-optic devices, including modulators, frequency combs, and microwave-to-optical transducers. However, the broader adoption of TFLN-based devices that rely on all-optical nonlinearities have been limited by the sensitivity of quasi-phase matching (QPM), realized via ferroelectric poling, to fabrication tolerances. Here, we propose a scalable fabrication process aimed at improving the wavelength-accuracy of optical frequency mixers in TFLN. In contrast to the conventional pole-before-etch approach, we first define the waveguide in TFLN and then perform ferroelectric poling. This sequence allows for precise metrology before and after waveguide definition to fully capture the geometry imperfections. Systematic errors can also be calibrated by measuring a subset of devices to fine-tune the QPM design for remaining devices on the wafer. Using this method, we fabricated a large number of second harmonic generation devices aimed at generating 737 nm light, with 73% operating within 5 nm of the target wavelength. Furthermore, we also demonstrate thermo-optic tuning and trimming of the devices via cladding deposition, with the former bringing ~96% of tested devices to the target wavelength. Our technique enables the rapid growth of integrated quantum frequency converters, photon pair sources, and optical parametric amplifiers, thus facilitating the integration of TFLN-based nonlinear frequency mixers into more complex and functional photonic systems.
format Preprint
id arxiv_https___arxiv_org_abs_2404_12381
institution arXiv
publishDate 2024
record_format arxiv
spellingShingle Wavelength-accurate and wafer-scale process for nonlinear frequency mixers in thin-film lithium niobate
Xin, C. J.
Lu, Shengyuan
Yang, Jiayu
Shams-Ansari, Amirhassan
Desiatov, Boris
Magalhães, Letícia S.
Ghosh, Soumya S.
McGee, Erin
Renaud, Dylan
Achuthan, Nicholas
Zvyagintsev, Arseniy
Barton III, David
Sinclair, Neil
Lončar, Marko
Applied Physics
Optics
Recent advancements in thin-film lithium niobate (TFLN) photonics have led to a new generation of high-performance electro-optic devices, including modulators, frequency combs, and microwave-to-optical transducers. However, the broader adoption of TFLN-based devices that rely on all-optical nonlinearities have been limited by the sensitivity of quasi-phase matching (QPM), realized via ferroelectric poling, to fabrication tolerances. Here, we propose a scalable fabrication process aimed at improving the wavelength-accuracy of optical frequency mixers in TFLN. In contrast to the conventional pole-before-etch approach, we first define the waveguide in TFLN and then perform ferroelectric poling. This sequence allows for precise metrology before and after waveguide definition to fully capture the geometry imperfections. Systematic errors can also be calibrated by measuring a subset of devices to fine-tune the QPM design for remaining devices on the wafer. Using this method, we fabricated a large number of second harmonic generation devices aimed at generating 737 nm light, with 73% operating within 5 nm of the target wavelength. Furthermore, we also demonstrate thermo-optic tuning and trimming of the devices via cladding deposition, with the former bringing ~96% of tested devices to the target wavelength. Our technique enables the rapid growth of integrated quantum frequency converters, photon pair sources, and optical parametric amplifiers, thus facilitating the integration of TFLN-based nonlinear frequency mixers into more complex and functional photonic systems.
title Wavelength-accurate and wafer-scale process for nonlinear frequency mixers in thin-film lithium niobate
topic Applied Physics
Optics
url https://arxiv.org/abs/2404.12381