Testbeam results of irradiated SiGe BiCMOS monolithic silicon pixel detector without internal gain layer

Fuente: arXiv

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Autori principali:	Moretti, T., Milanesio, M., Cardella, R., Kugathasan, T., Picardi, A., Semendyaev, I., Elviretti, M., Rücker, H., Nakamura, K., Takubo, Y., Togawa, M., Cadoux, F., Cardarelli, R., Cecconi, L., Débieux, S., Favre, Y., Fenoglio, C. A., Ferrere, D., Gonzalez-Sevilla, S., Iodice, L., Kotitsa, R., Magliocca, C., Nessi, M., Pizarro-Medina, A., Iglesias, J. Sabater, Saidi, J., Pinto, M. Vicente Barreto, Zambito, S., Paolozzi, L., Iacobucci, G.
Natura:	Preprint
Pubblicazione:	2024
Soggetti:	Instrumentation and Detectors
Accesso online:	Acceder al recurso
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_version_	1866929392959094784
author	Moretti, T. Milanesio, M. Cardella, R. Kugathasan, T. Picardi, A. Semendyaev, I. Elviretti, M. Rücker, H. Nakamura, K. Takubo, Y. Togawa, M. Cadoux, F. Cardarelli, R. Cecconi, L. Débieux, S. Favre, Y. Fenoglio, C. A. Ferrere, D. Gonzalez-Sevilla, S. Iodice, L. Kotitsa, R. Magliocca, C. Nessi, M. Pizarro-Medina, A. Iglesias, J. Sabater Saidi, J. Pinto, M. Vicente Barreto Zambito, S. Paolozzi, L. Iacobucci, G.
author_facet	Moretti, T. Milanesio, M. Cardella, R. Kugathasan, T. Picardi, A. Semendyaev, I. Elviretti, M. Rücker, H. Nakamura, K. Takubo, Y. Togawa, M. Cadoux, F. Cardarelli, R. Cecconi, L. Débieux, S. Favre, Y. Fenoglio, C. A. Ferrere, D. Gonzalez-Sevilla, S. Iodice, L. Kotitsa, R. Magliocca, C. Nessi, M. Pizarro-Medina, A. Iglesias, J. Sabater Saidi, J. Pinto, M. Vicente Barreto Zambito, S. Paolozzi, L. Iacobucci, G.
contents	Samples of the monolithic silicon pixel ASIC prototype produced in 2022 within the framework of the Horizon 2020 MONOLITH ERC Advanced project were irradiated with 70 MeV protons up to a fluence of 1 x 1016 neq/cm2, and then tested using a beam of 120 GeV/c pions. The ASIC contains a matrix of 100 μm pitch hexagonal pixels, readout out by low noise and very fast frontend electronics produced in a 130 nm SiGe BiCMOS technology process. The dependence on the proton fluence of the efficiency and the time resolution of this prototype was measured with the frontend electronics operated at a power density between 0.13 and 0.9 W/cm2. The testbeam data show that the detection efficiency of 99.96% measured at sensor bias voltage of 200 V before irradiation becomes 96.2% after a fluence of 1 x 1016 neq/cm2. An increase of the sensor bias voltage to 300 V provides an efficiency to 99.7% at that proton fluence. The timing resolution of 20 ps measured before irradiation rises for a proton fluence of 1 x 1016 neq/cm2 to 53 and 45 ps at HV = 200 and 300 V, respectively.
format	Preprint
id	arxiv_https___arxiv_org_abs_2404_12885
institution	arXiv
publishDate	2024
record_format	arxiv
spellingShingle	Testbeam results of irradiated SiGe BiCMOS monolithic silicon pixel detector without internal gain layer Moretti, T. Milanesio, M. Cardella, R. Kugathasan, T. Picardi, A. Semendyaev, I. Elviretti, M. Rücker, H. Nakamura, K. Takubo, Y. Togawa, M. Cadoux, F. Cardarelli, R. Cecconi, L. Débieux, S. Favre, Y. Fenoglio, C. A. Ferrere, D. Gonzalez-Sevilla, S. Iodice, L. Kotitsa, R. Magliocca, C. Nessi, M. Pizarro-Medina, A. Iglesias, J. Sabater Saidi, J. Pinto, M. Vicente Barreto Zambito, S. Paolozzi, L. Iacobucci, G. Instrumentation and Detectors Samples of the monolithic silicon pixel ASIC prototype produced in 2022 within the framework of the Horizon 2020 MONOLITH ERC Advanced project were irradiated with 70 MeV protons up to a fluence of 1 x 1016 neq/cm2, and then tested using a beam of 120 GeV/c pions. The ASIC contains a matrix of 100 μm pitch hexagonal pixels, readout out by low noise and very fast frontend electronics produced in a 130 nm SiGe BiCMOS technology process. The dependence on the proton fluence of the efficiency and the time resolution of this prototype was measured with the frontend electronics operated at a power density between 0.13 and 0.9 W/cm2. The testbeam data show that the detection efficiency of 99.96% measured at sensor bias voltage of 200 V before irradiation becomes 96.2% after a fluence of 1 x 1016 neq/cm2. An increase of the sensor bias voltage to 300 V provides an efficiency to 99.7% at that proton fluence. The timing resolution of 20 ps measured before irradiation rises for a proton fluence of 1 x 1016 neq/cm2 to 53 and 45 ps at HV = 200 and 300 V, respectively.
title	Testbeam results of irradiated SiGe BiCMOS monolithic silicon pixel detector without internal gain layer
topic	Instrumentation and Detectors
url	https://arxiv.org/abs/2404.12885