Domain wall migration-mediated ferroelectric switching and Rashba effect tuning in GeTe thin films
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arXiv
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| Format: | Preprint |
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2024
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| _version_ | 1866917760508887040 |
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| author | Vojáček, Libor Chshiev, Mairbek Li, Jing |
| author_facet | Vojáček, Libor Chshiev, Mairbek Li, Jing |
| contents | Germanium Telluride (GeTe), identified as a ferroelectric Rashba semiconductor, is a promising candidate for future electronic devices in computing and memory applications. However, its ferroelectric switching on a microscopic scale remains to be understood. Here, we propose that the migration of a domain wall can be the mechanism that mediates the ferroelectric switching. By employing $ab~initio$ methods, such a mechanism is characterized by an energy barrier of $66.8$ meV/nm$^2$, in a suitable range for retention and switchability. In accompanying the domain wall migration, the net Rashba effect is tunable, as it is a result of competition between layers with opposite electric polarization. These results shed light on the ferroelectric switching mechanism in GeTe, paving stones for the design of potential GeTe-based devices. |
| format | Preprint |
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arxiv_https___arxiv_org_abs_2404_13293 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Domain wall migration-mediated ferroelectric switching and Rashba effect tuning in GeTe thin films Vojáček, Libor Chshiev, Mairbek Li, Jing Materials Science Mesoscale and Nanoscale Physics Germanium Telluride (GeTe), identified as a ferroelectric Rashba semiconductor, is a promising candidate for future electronic devices in computing and memory applications. However, its ferroelectric switching on a microscopic scale remains to be understood. Here, we propose that the migration of a domain wall can be the mechanism that mediates the ferroelectric switching. By employing $ab~initio$ methods, such a mechanism is characterized by an energy barrier of $66.8$ meV/nm$^2$, in a suitable range for retention and switchability. In accompanying the domain wall migration, the net Rashba effect is tunable, as it is a result of competition between layers with opposite electric polarization. These results shed light on the ferroelectric switching mechanism in GeTe, paving stones for the design of potential GeTe-based devices. |
| title | Domain wall migration-mediated ferroelectric switching and Rashba effect tuning in GeTe thin films |
| topic | Materials Science Mesoscale and Nanoscale Physics |
| url | https://arxiv.org/abs/2404.13293 |