Time-Gated Optical Spectroscopy of Field-Effect Stimulated Recombination via Interfacial Point Defects in Fully-Processed Silicon Carbide Power MOSFETs
Fuente:
arXiv
Salvato in:
| Autori principali: | , , , , , , , , , , , , |
|---|---|
| Natura: | Preprint |
| Pubblicazione: |
2024
|
| Soggetti: | |
| Accesso online: | |
| Tags: |
Aggiungi Tag
Nessun Tag, puoi essere il primo ad aggiungerne!!
|
| _version_ | 1866913486037057536 |
|---|---|
| author | Feil, Maximilian W. Weger, Magdalena Reisinger, Hans Aichinger, Thomas Kabakow, André Waldhör, Dominic Jakowetz, Andreas C. Prigann, Sven Pobegen, Gregor Gustin, Wolfgang Waltl, Michael Bockstedte, Michel Grasser, Tibor |
| author_facet | Feil, Maximilian W. Weger, Magdalena Reisinger, Hans Aichinger, Thomas Kabakow, André Waldhör, Dominic Jakowetz, Andreas C. Prigann, Sven Pobegen, Gregor Gustin, Wolfgang Waltl, Michael Bockstedte, Michel Grasser, Tibor |
| contents | Fully-processed SiC power metal-oxide-semiconductor field-effect transistors (MOSFETs) emit light during switching of the gate terminal, while both drain and source terminals are grounded. The emitted photons are caused by defect-assisted recombination of electrons and holes at the 4H-SiC/SiO$_2$ interface and can be detected through the SiC substrate. Here, we present time-gated spectroscopic characterization of these interfacial point defects. Unlike in previous studies, the devices were opened in such a way that the drain-contact remained electrically active. A separate examination of the photons emitted at the rising and falling transitions of the gate-source voltage enabled the extraction of two different spectral components. One of these components consists of a single transition with phonon replicas of a local vibrational mode (LVM) with an astonishingly high energy of 220 meV $\unicode{x2013}$ well above the highest phonon modes in 4H-SiC and SiO$_2$ of 120 meV and 137 meV, respectively. Based on a quantum mechanical model, we successfully fitted its emission spectrum and assigned it to donor-acceptor pair recombination involving a carbon cluster-like defect. Other transitions were assigned to EH$_{6/7}$-assisted, EK$_2$-D, and nitrogen-aluminum donor-acceptor pair recombination. Due to the relevance of these defects in the operation of SiC MOSFETs, these novel insights will contribute to improved reliability and performance of these devices. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2404_13463 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Time-Gated Optical Spectroscopy of Field-Effect Stimulated Recombination via Interfacial Point Defects in Fully-Processed Silicon Carbide Power MOSFETs Feil, Maximilian W. Weger, Magdalena Reisinger, Hans Aichinger, Thomas Kabakow, André Waldhör, Dominic Jakowetz, Andreas C. Prigann, Sven Pobegen, Gregor Gustin, Wolfgang Waltl, Michael Bockstedte, Michel Grasser, Tibor Applied Physics Fully-processed SiC power metal-oxide-semiconductor field-effect transistors (MOSFETs) emit light during switching of the gate terminal, while both drain and source terminals are grounded. The emitted photons are caused by defect-assisted recombination of electrons and holes at the 4H-SiC/SiO$_2$ interface and can be detected through the SiC substrate. Here, we present time-gated spectroscopic characterization of these interfacial point defects. Unlike in previous studies, the devices were opened in such a way that the drain-contact remained electrically active. A separate examination of the photons emitted at the rising and falling transitions of the gate-source voltage enabled the extraction of two different spectral components. One of these components consists of a single transition with phonon replicas of a local vibrational mode (LVM) with an astonishingly high energy of 220 meV $\unicode{x2013}$ well above the highest phonon modes in 4H-SiC and SiO$_2$ of 120 meV and 137 meV, respectively. Based on a quantum mechanical model, we successfully fitted its emission spectrum and assigned it to donor-acceptor pair recombination involving a carbon cluster-like defect. Other transitions were assigned to EH$_{6/7}$-assisted, EK$_2$-D, and nitrogen-aluminum donor-acceptor pair recombination. Due to the relevance of these defects in the operation of SiC MOSFETs, these novel insights will contribute to improved reliability and performance of these devices. |
| title | Time-Gated Optical Spectroscopy of Field-Effect Stimulated Recombination via Interfacial Point Defects in Fully-Processed Silicon Carbide Power MOSFETs |
| topic | Applied Physics |
| url | https://arxiv.org/abs/2404.13463 |