Saved in:
| Main Authors: | Li, Ying, Shen, Yang, Xu, Linqiang, Liu, Shiqi, Chen, Yang, Li, Qiuhui, Yang, Zongmeng, Sun, Xiaotian, Tian, He, Lu, Jing |
|---|---|
| Format: | Preprint |
| Published: |
2024
|
| Subjects: | |
| Online Access: | https://arxiv.org/abs/2404.13801 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Similar Items
Symmetric n-and p-Type Sub-5-nm 1D Graphene Nanoribbon Transistors for Homogeneous CMOS Applications
by: Xu, Linqiang, et al.
Published: (2024)
by: Xu, Linqiang, et al.
Published: (2024)
High‐Performance Polymer Monolayer Transistors with Sub‐20 nm Channel Lengths
by: Mengmeng Li, et al.
Published: (2025)
by: Mengmeng Li, et al.
Published: (2025)
Recent Experimental Breakthroughs on 2D Transistors: Approaching the Theoretical Limit
by: Hong Li, et al.
Published: (2024)
by: Hong Li, et al.
Published: (2024)
Bilayer TeO2: The First Oxide Semiconductor with Symmetric Sub-5-nm NMOS and PMOS
by: Xu, Linqiang, et al.
Published: (2024)
by: Xu, Linqiang, et al.
Published: (2024)
Physics-integrated Neural Network for Quantum Transport Prediction of Field-effect Transistor
by: Zhang, Xiuying, et al.
Published: (2024)
by: Zhang, Xiuying, et al.
Published: (2024)
Ab Initio Device-Driven Screening of Sub-1-nm Thickness Oxide Semiconductors for Future CMOS Technology Nodes
by: Xu, Linqiang, et al.
Published: (2024)
by: Xu, Linqiang, et al.
Published: (2024)
Pressure-Driven Metallicity in Ångström-Thickness 2D Bismuth and Layer-Selective Ohmic Contact to MoS2
by: Wang, Shuhua, et al.
Published: (2025)
by: Wang, Shuhua, et al.
Published: (2025)
Anomalous Reconfigurable‐Transport in MoS 2 Transistors by Electrically‐Switchable van der Waals Interfacial Dipole
by: Shengqian Zheng, et al.
Published: (2025)
by: Shengqian Zheng, et al.
Published: (2025)
Synergistic Engineering of Top Gate Stack for Low Hysteresis 2D MoS2 Transistors
by: Chuming Sheng, et al.
Published: (2024)
by: Chuming Sheng, et al.
Published: (2024)
Molecular Tautomerization on the Surface of Monolayer MoS 2 for Field‐Effect Transistors with Ultra‐High Mobilities and On–Off Ratios
by: Huiqiang Lu, et al.
Published: (2026)
by: Huiqiang Lu, et al.
Published: (2026)
Enhanced Charge Carrier Transport in WSe 2 Field‐Effect Transistors via Monolayer MoS 2 Tunneling Contacts
by: Amirhossein Nazarian‐Firouzabadi, et al.
Published: (2025)
by: Amirhossein Nazarian‐Firouzabadi, et al.
Published: (2025)
Crosstalk‐Enabled High In‐Plane Anisotropy of Monolayer MoS 2 Nanoribbons
by: Qingqing Luo, et al.
Published: (2025)
by: Qingqing Luo, et al.
Published: (2025)
Eight In. Wafer‐Scale Epitaxial Monolayer MoS2
by: Hua Yu, et al.
Published: (2024)
by: Hua Yu, et al.
Published: (2024)
Self‐Aligned Spacer Doping in MoS 2 High‐κ Top‐Gate Transistors
by: Kai‐Chun Huang, et al.
Published: (2026)
by: Kai‐Chun Huang, et al.
Published: (2026)
Tuning the Electronic Characteristics of Monolayer MoS2‐Based Transistors by Ion Irradiation: The Role of the Substrate
by: Zahra Fekri, et al.
Published: (2024)
by: Zahra Fekri, et al.
Published: (2024)
Analysis and EOT Scaling on Top‐ and Double‐Gate 2D CVD‐Grown Monolayer MoS2 FETs
by: Naim Hossain Patoary, et al.
Published: (2024)
by: Naim Hossain Patoary, et al.
Published: (2024)
Building 3D Crosslinked Graphene‐MXene Nanoarchitectures Decorated with MoS2 Quantum Dots Enables Efficient Electrocatalytic Hydrogen Evolution
by: Ying Feng, et al.
Published: (2024)
by: Ying Feng, et al.
Published: (2024)
Ultrafast‐Laser‐Induced Nanostructures with Continuously Tunable Period on Au Surface for Photoluminescence Control in Monolayer MoS 2
by: Zhicheng Chen, et al.
Published: (2024)
by: Zhicheng Chen, et al.
Published: (2024)
Direct Observation of Semimetal Contact Induced Charge Doping and Strain Effect in CVD‐Grown Monolayer MoS2 Transistors
by: Xuewei Feng, et al.
Published: (2024)
by: Xuewei Feng, et al.
Published: (2024)
Interfacial Effects on the Photoluminescence Properties of Epitaxial Monolayer MoS2 on MoO2 on C‐Sapphire
by: Dingbang Yang, et al.
Published: (2024)
by: Dingbang Yang, et al.
Published: (2024)
Highly Absorbing Monolayer MoS2 for a Large Reflection Phase Modulation
by: Yingying Wang, et al.
Published: (2024)
by: Yingying Wang, et al.
Published: (2024)
Piezoelectric Electrostatic Superlattices in Monolayer MoS$_2$
by: Ramasubramaniam, Ashwin, et al.
Published: (2023)
by: Ramasubramaniam, Ashwin, et al.
Published: (2023)
Second Harmonic Characteristics of Large‐Area ALD‐Grown MoS 2 Monolayers and MoS 2 /WS 2 Heterostructures with Sub‐Millimeter Crystalline Orientation
by: Marco Antonio Gonzalez‐Angulo, et al.
Published: (2025)
by: Marco Antonio Gonzalez‐Angulo, et al.
Published: (2025)
Optoelectronic Transistor Based on InSe/MoS2 Heterostructure for Multimodal Nociceptor
by: Haobin Wang, et al.
Published: (2024)
by: Haobin Wang, et al.
Published: (2024)
Edgetronics in Two-Dimensional Altermagnets
by: Fang, Shibo, et al.
Published: (2025)
by: Fang, Shibo, et al.
Published: (2025)
Dual‐Gate Ambipolar MoTe 2 Transistor Enabled Reconfigurable Logic and Memory for Next‐Generation Computing
by: Haoyue Lu, et al.
Published: (2026)
by: Haoyue Lu, et al.
Published: (2026)
Ionic‐Migration‐Gated 2D Perovskite/MoS 2 Junction Field‐Effect Transistor for Ultralow‐Power Neuromorphic Vision
by: Rui He, et al.
Published: (2026)
by: Rui He, et al.
Published: (2026)
Methodological Considerations for Strengthening the BCS ‐Recanalisation Score in Recanalisation‐Treated BCS Patients
by: Linqiang Li
Published: (2025)
by: Linqiang Li
Published: (2025)
Transport Evidence for Wigner Crystals in Monolayer MoTe2
by: Zhang, Mingjie, et al.
Published: (2025)
by: Zhang, Mingjie, et al.
Published: (2025)
A Piezoelectric Electromagnetic Composite Energy Harvester for Collecting Pedestrian Walking Energy
by: Linqiang Feng, et al.
Published: (2024)
by: Linqiang Feng, et al.
Published: (2024)
Reduction in Thermal Conductivity of Monolayer MoS2 by Large Mechanical Strains for Efficient Thermal Management
by: Liu, Jun, et al.
Published: (2024)
by: Liu, Jun, et al.
Published: (2024)
Low‐Defect‐Density Monolayer MoS2 Wafer by Oxygen‐Assisted Growth‐Repair Strategy
by: Xiaomin Zhang, et al.
Published: (2024)
by: Xiaomin Zhang, et al.
Published: (2024)
Negative Capacitance and Dirac Source Hybrid Technique MoS2 Field‐Effect Transistors with Enhanced On‐State Current
by: Menggan Liu, et al.
Published: (2025)
by: Menggan Liu, et al.
Published: (2025)
Deterministic and Scalable Quantum Light Generation in DNA Origami-Programmed Organic Molecule-MoS$_2$ Monolayer Hybrids
by: Zhao, Shen, et al.
Published: (2025)
by: Zhao, Shen, et al.
Published: (2025)
Imaging the Quantum Capacitance of Strained MoS2 Monolayers by Electrostatic Force Microscopy
by: Di Giorgio, Cinzia, et al.
Published: (2023)
by: Di Giorgio, Cinzia, et al.
Published: (2023)
Evaluation of Strain and Charge‐Transfer Doping in Wet‐Polymeric Transferred Monolayer MoS 2 : Implications for Field Effect Transistors
by: Choudhury Abinash Bhuyan, et al.
Published: (2026)
by: Choudhury Abinash Bhuyan, et al.
Published: (2026)
Impact of the Schottky Barrier and Contact‐Induced Strain Variations inside the Channel on the Electrical Behavior of Monolayer MoS 2 Transistors
by: Salvatore Ethan Panasci, et al.
Published: (2025)
by: Salvatore Ethan Panasci, et al.
Published: (2025)
Thiophene Expanded Self‐Assembled Monolayer as Hole Transport Layer for Organic Solar Cells with Efficiency of 20.78%
by: Yuanpeng Xie, et al.
Published: (2025)
by: Yuanpeng Xie, et al.
Published: (2025)
Photoluminescence-Based Gas Sensing with MoS2 Monolayers
by: Ngo, Gia Quyet, et al.
Published: (2024)
by: Ngo, Gia Quyet, et al.
Published: (2024)
Effect of Strain on the Band Gap of Monolayer MoS$_2$
by: Sah, Raj K., et al.
Published: (2024)
by: Sah, Raj K., et al.
Published: (2024)
Similar Items
-
Symmetric n-and p-Type Sub-5-nm 1D Graphene Nanoribbon Transistors for Homogeneous CMOS Applications
by: Xu, Linqiang, et al.
Published: (2024) -
High‐Performance Polymer Monolayer Transistors with Sub‐20 nm Channel Lengths
by: Mengmeng Li, et al.
Published: (2025) -
Recent Experimental Breakthroughs on 2D Transistors: Approaching the Theoretical Limit
by: Hong Li, et al.
Published: (2024) -
Bilayer TeO2: The First Oxide Semiconductor with Symmetric Sub-5-nm NMOS and PMOS
by: Xu, Linqiang, et al.
Published: (2024) -
Physics-integrated Neural Network for Quantum Transport Prediction of Field-effect Transistor
by: Zhang, Xiuying, et al.
Published: (2024)