Low-Dissipation Nanomechanical Devices from Monocrystalline Silicon Carbide

Fuente: arXiv
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Hauptverfasser: Sementilli, Leo, Lukin, Daniil M., Lee, Hope, Yang, Joshua, Romero, Erick, Vučković, Jelena, Bowen, Warwick P.
Format: Preprint
Veröffentlicht: 2024
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author Sementilli, Leo
Lukin, Daniil M.
Lee, Hope
Yang, Joshua
Romero, Erick
Vučković, Jelena
Bowen, Warwick P.
author_facet Sementilli, Leo
Lukin, Daniil M.
Lee, Hope
Yang, Joshua
Romero, Erick
Vučković, Jelena
Bowen, Warwick P.
contents The applications of nanomechanical resonators range from biomolecule mass sensing to hybrid quantum interfaces. Their performance is often limited by internal material damping, which can be greatly reduced by using crystalline materials. Crystalline silicon carbide is appealing due to its exquisite mechanical, electrical and optical properties, but has suffered from high internal damping due to material defects. Here we resolve this by developing nanomechanical resonators fabricated from bulk monocrystalline 4H-silicon carbide. This allows us to achieve damping as low as 2.7 mHz, more than an order-of-magnitude lower than any previous crystalline silicon carbide resonator and corresponding to a quality factor as high as 20 million at room temperature. The volumetric dissipation of our devices reaches the material limit for silicon carbide for the first time. This provides a path to greatly increase the performance of silicon carbide nanomechanical resonators.
format Preprint
id arxiv_https___arxiv_org_abs_2404_13893
institution arXiv
publishDate 2024
record_format arxiv
spellingShingle Low-Dissipation Nanomechanical Devices from Monocrystalline Silicon Carbide
Sementilli, Leo
Lukin, Daniil M.
Lee, Hope
Yang, Joshua
Romero, Erick
Vučković, Jelena
Bowen, Warwick P.
Mesoscale and Nanoscale Physics
Applied Physics
The applications of nanomechanical resonators range from biomolecule mass sensing to hybrid quantum interfaces. Their performance is often limited by internal material damping, which can be greatly reduced by using crystalline materials. Crystalline silicon carbide is appealing due to its exquisite mechanical, electrical and optical properties, but has suffered from high internal damping due to material defects. Here we resolve this by developing nanomechanical resonators fabricated from bulk monocrystalline 4H-silicon carbide. This allows us to achieve damping as low as 2.7 mHz, more than an order-of-magnitude lower than any previous crystalline silicon carbide resonator and corresponding to a quality factor as high as 20 million at room temperature. The volumetric dissipation of our devices reaches the material limit for silicon carbide for the first time. This provides a path to greatly increase the performance of silicon carbide nanomechanical resonators.
title Low-Dissipation Nanomechanical Devices from Monocrystalline Silicon Carbide
topic Mesoscale and Nanoscale Physics
Applied Physics
url https://arxiv.org/abs/2404.13893