Physical Vapor Deposition of High Mobility P-type Tellurium and its Applications for Gate-tunable van der Waals PN Photodiodes
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arXiv
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| Format: | Preprint |
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2024
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| _version_ | 1866916218616676352 |
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| author | Huang, Tianyi Lin, Sen Zou, Jingyi Wang, Zexiao Zhong, Yibai Li, Jingwei Wang, Ruixuan Wang, Han Li, Qing Xu, Min Shen, Sheng Zhang, Xu |
| author_facet | Huang, Tianyi Lin, Sen Zou, Jingyi Wang, Zexiao Zhong, Yibai Li, Jingwei Wang, Ruixuan Wang, Han Li, Qing Xu, Min Shen, Sheng Zhang, Xu |
| contents | Recently tellurium (Te) has attracted resurgent interests due to its p-type characteristics and outstanding ambient environmental stability. Here we present a substrate engineering based physical vapor deposition method to synthesize high-quality Te nanoflakes and achieved a field-effect hole mobility of 1500 cm2/Vs, which is, to the best of our knowledge, the highest among the existing synthesized van der Waals p-type semiconductors. The high mobility Te enables the fabrication of Te/MoS2 pn diodes with highly gate-tunable electronic and optoelectronic characteristics. The Te/MoS2 heterostructure can be used as a visible range photodetector with a current responsivity up to 630 A/W, which is about one order of magnitude higher than the one achieved using p-type Si-MoS2 PN photodiodes. The photo response of the Te/MoS2 heterojunction also exhibits strong gate tunability due to their ultrathin thickness and unique band structures. The successful synthesis of high mobility Te and the enabled Te/MoS2 photodiodes show promise for the development of highly tunable and ultrathin photodetectors. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2404_14681 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Physical Vapor Deposition of High Mobility P-type Tellurium and its Applications for Gate-tunable van der Waals PN Photodiodes Huang, Tianyi Lin, Sen Zou, Jingyi Wang, Zexiao Zhong, Yibai Li, Jingwei Wang, Ruixuan Wang, Han Li, Qing Xu, Min Shen, Sheng Zhang, Xu Applied Physics Recently tellurium (Te) has attracted resurgent interests due to its p-type characteristics and outstanding ambient environmental stability. Here we present a substrate engineering based physical vapor deposition method to synthesize high-quality Te nanoflakes and achieved a field-effect hole mobility of 1500 cm2/Vs, which is, to the best of our knowledge, the highest among the existing synthesized van der Waals p-type semiconductors. The high mobility Te enables the fabrication of Te/MoS2 pn diodes with highly gate-tunable electronic and optoelectronic characteristics. The Te/MoS2 heterostructure can be used as a visible range photodetector with a current responsivity up to 630 A/W, which is about one order of magnitude higher than the one achieved using p-type Si-MoS2 PN photodiodes. The photo response of the Te/MoS2 heterojunction also exhibits strong gate tunability due to their ultrathin thickness and unique band structures. The successful synthesis of high mobility Te and the enabled Te/MoS2 photodiodes show promise for the development of highly tunable and ultrathin photodetectors. |
| title | Physical Vapor Deposition of High Mobility P-type Tellurium and its Applications for Gate-tunable van der Waals PN Photodiodes |
| topic | Applied Physics |
| url | https://arxiv.org/abs/2404.14681 |