Hopping of the center-of-mass of single G centers in silicon-on-insulator
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| Autores principales: | , , , , , , , , , , , , , , , , , |
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| Formato: | Preprint |
| Publicado: |
2024
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| author | Durand, Alrik Baron, Yoann Udvarhelyi, Péter Cache, Félix R., Krithika V. Herzig, Tobias Khoury, Mario Pezzagna, Sébastien Meijer, Jan Hartmann, Jean-Michel Reboh, Shay Abbarchi, Marco Robert-Philip, Isabelle Gali, Adam Gérard, Jean-Michel Jacques, Vincent Cassabois, Guillaume Dréau, Anaïs |
| author_facet | Durand, Alrik Baron, Yoann Udvarhelyi, Péter Cache, Félix R., Krithika V. Herzig, Tobias Khoury, Mario Pezzagna, Sébastien Meijer, Jan Hartmann, Jean-Michel Reboh, Shay Abbarchi, Marco Robert-Philip, Isabelle Gali, Adam Gérard, Jean-Michel Jacques, Vincent Cassabois, Guillaume Dréau, Anaïs |
| contents | Among the wealth of single fluorescent defects recently detected in silicon, the G center catches interest for its telecom single-photon emission that could be coupled to a metastable electron spin triplet. The G center is a unique defect where the standard Born-Oppenheimer approximation breaks down as one of its atoms can move between 6 lattice sites under optical excitation. The impact of this atomic reconfiguration on the photoluminescence properties of G centers is still largely unknown, especially in silicon-on-insulator (SOI) samples. Here, we investigate the displacement of the center-of-mass of the G center in silicon. We show that single G defects in SOI exhibit a multipolar emission and zero-phonon line fine structures with splittings up to $\sim1$ meV, both indicating a motion of the defect central atom over time. Combining polarization and spectral analysis at the single-photon level, we evidence that the reconfiguration dynamics are drastically different from the one of the unperturbed G center in bulk silicon. The SOI structure freezes the delocalization of the G defect center-of-mass and as a result, enables to isolate linearly polarized optical lines. Under above-bandgap optical excitation, the central atom of G centers in SOI behaves as if it were in a 6-slot roulette wheel, randomly alternating between localized crystal sites at each optical cycle. Comparative measurements in a bulk silicon sample and ab initio calculations highlight that strain is likely the dominant perturbation impacting the G center geometry. These results shed light on the importance of the atomic reconfiguration dynamics to understand and control the photoluminescence properties of the G center in silicon. More generally, these findings emphasize the impact of strain fluctuations inherent to SOI wafers for future quantum integrated photonics applications based on color centers in silicon. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2404_15069 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Hopping of the center-of-mass of single G centers in silicon-on-insulator Durand, Alrik Baron, Yoann Udvarhelyi, Péter Cache, Félix R., Krithika V. Herzig, Tobias Khoury, Mario Pezzagna, Sébastien Meijer, Jan Hartmann, Jean-Michel Reboh, Shay Abbarchi, Marco Robert-Philip, Isabelle Gali, Adam Gérard, Jean-Michel Jacques, Vincent Cassabois, Guillaume Dréau, Anaïs Quantum Physics Among the wealth of single fluorescent defects recently detected in silicon, the G center catches interest for its telecom single-photon emission that could be coupled to a metastable electron spin triplet. The G center is a unique defect where the standard Born-Oppenheimer approximation breaks down as one of its atoms can move between 6 lattice sites under optical excitation. The impact of this atomic reconfiguration on the photoluminescence properties of G centers is still largely unknown, especially in silicon-on-insulator (SOI) samples. Here, we investigate the displacement of the center-of-mass of the G center in silicon. We show that single G defects in SOI exhibit a multipolar emission and zero-phonon line fine structures with splittings up to $\sim1$ meV, both indicating a motion of the defect central atom over time. Combining polarization and spectral analysis at the single-photon level, we evidence that the reconfiguration dynamics are drastically different from the one of the unperturbed G center in bulk silicon. The SOI structure freezes the delocalization of the G defect center-of-mass and as a result, enables to isolate linearly polarized optical lines. Under above-bandgap optical excitation, the central atom of G centers in SOI behaves as if it were in a 6-slot roulette wheel, randomly alternating between localized crystal sites at each optical cycle. Comparative measurements in a bulk silicon sample and ab initio calculations highlight that strain is likely the dominant perturbation impacting the G center geometry. These results shed light on the importance of the atomic reconfiguration dynamics to understand and control the photoluminescence properties of the G center in silicon. More generally, these findings emphasize the impact of strain fluctuations inherent to SOI wafers for future quantum integrated photonics applications based on color centers in silicon. |
| title | Hopping of the center-of-mass of single G centers in silicon-on-insulator |
| topic | Quantum Physics |
| url | https://arxiv.org/abs/2404.15069 |