Hopping of the center-of-mass of single G centers in silicon-on-insulator

Documenti analoghi

• Genuine and faux single G centers in carbon-implanted silicon
  di: Durand, Alrik, et al.
  Pubblicazione: (2024)
• Optical detection of the electron spin resonances of G centers in silicon
  di: Cache, Félix, et al.
  Pubblicazione: (2026)
• Purcell enhancement of silicon W centers in circular Bragg grating cavities
  di: Lefaucher, Baptiste, et al.
  Pubblicazione: (2023)
• Cavity-enhanced zero-phonon emission from an ensemble of G centers in a silicon-on-insulator microring
  di: Lefaucher, B., et al.
  Pubblicazione: (2022)
• Bright and pure single-photon source in a silicon chip by nanoscale positioning of a color center in a microcavity
  di: Lefaucher, Baptiste, et al.
  Pubblicazione: (2025)