Highly sensitive and efficient 1550 nm photodetector for room temperature operation

Fuente: arXiv
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Auteurs principaux: Rituraj, Yu, Zhi Gang, Kandegedara, R. M. E. B., Fan, Shanhui, Krishnamurthy, Srini
Format: Preprint
Publié: 2024
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author Rituraj
Yu, Zhi Gang
Kandegedara, R. M. E. B.
Fan, Shanhui
Krishnamurthy, Srini
author_facet Rituraj
Yu, Zhi Gang
Kandegedara, R. M. E. B.
Fan, Shanhui
Krishnamurthy, Srini
contents Photonic quantum technologies such as effective quantum communication require room temperature (RT) operating single- or few- photon sensors with high external quantum efficiency (EQE) at 1550 nm wavelength. The leading class of devices in this segment is avalanche photodetectors operating particularly in the Geiger mode. Often the requirements for RT operation and for a high EQE are in conflict, resulting in a compromised solution. We have developed a device which employs a two-dimensional (2D) semiconductor material on a co-optimized dielectric photonic crystal substrate to simultaneously decrease the dark current by three orders of magnitude at RT and maintain an EQE of >99%. The device is amenable to avalanching and form a basis for single photon detection with ultra-low dark current and high photodetection efficiency. Harnessing the high carrier mobility of 2D materials, the device has ~ps jitter time and can be integrated into a large 2D array camera.
format Preprint
id arxiv_https___arxiv_org_abs_2404_15218
institution arXiv
publishDate 2024
record_format arxiv
spellingShingle Highly sensitive and efficient 1550 nm photodetector for room temperature operation
Rituraj
Yu, Zhi Gang
Kandegedara, R. M. E. B.
Fan, Shanhui
Krishnamurthy, Srini
Optics
Instrumentation and Detectors
Quantum Physics
Photonic quantum technologies such as effective quantum communication require room temperature (RT) operating single- or few- photon sensors with high external quantum efficiency (EQE) at 1550 nm wavelength. The leading class of devices in this segment is avalanche photodetectors operating particularly in the Geiger mode. Often the requirements for RT operation and for a high EQE are in conflict, resulting in a compromised solution. We have developed a device which employs a two-dimensional (2D) semiconductor material on a co-optimized dielectric photonic crystal substrate to simultaneously decrease the dark current by three orders of magnitude at RT and maintain an EQE of >99%. The device is amenable to avalanching and form a basis for single photon detection with ultra-low dark current and high photodetection efficiency. Harnessing the high carrier mobility of 2D materials, the device has ~ps jitter time and can be integrated into a large 2D array camera.
title Highly sensitive and efficient 1550 nm photodetector for room temperature operation
topic Optics
Instrumentation and Detectors
Quantum Physics
url https://arxiv.org/abs/2404.15218