Planar channeling of 855 MeV electrons in a boron-doped (110) diamond undulator -- a case study

Fuente: arXiv

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Bibliographic Details
Main Authors:	Backe, H., Lauth, W., Klag, P., Caliste, Thu Nhi Tran
Format:	Preprint
Published:	2024
Subjects:	Accelerator Physics
Online Access:	Acceder al recurso
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Internet

https://arxiv.org/abs/2404.15376