Features and Peculiarities of Gate-Voltage Modulation of Spin-Orbit Interaction in FeCoB Nanomagnets: Insights into the Physical Origins of the VCMA Effect
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arXiv
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| Format: | Preprint |
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2024
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| _version_ | 1866914871814127616 |
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| author | Zayets, Vadym |
| author_facet | Zayets, Vadym |
| contents | The paper investigates the systematic dependencies of the anisotropy field and the strength of spin-orbit (SO) interaction on gate voltage in Ta/FeB/MgO nanomagnets. Our findings reveal an intriguing opposite polarity in the gate-voltage dependencies of the anisotropy field and the coefficient of SO interaction across all studied nanomagnets. This opposite polarity indicates that the gate-voltage modulation of spin-orbit interaction is not the primary contributor to the voltage-controlled magnetic anisotropy (VCMA) effect. Instead, the gate-voltage modulation of magnetization emerges as the most probable candidate, given its polarity aligns with the observed modulation of anisotropy. The modulation of magnetic anisotropy is influenced by two major contributions of opposite polarities, which effectively counterbalance each other and reduce the overall VCMA effect. Optimizing the balance between these contributions could potentially lead to a substantial enhancement of the VCMA effect. Our measurements did not detect any modulation of the in-plane component of spin accumulation by the gate voltage. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2404_15695 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Features and Peculiarities of Gate-Voltage Modulation of Spin-Orbit Interaction in FeCoB Nanomagnets: Insights into the Physical Origins of the VCMA Effect Zayets, Vadym Mesoscale and Nanoscale Physics The paper investigates the systematic dependencies of the anisotropy field and the strength of spin-orbit (SO) interaction on gate voltage in Ta/FeB/MgO nanomagnets. Our findings reveal an intriguing opposite polarity in the gate-voltage dependencies of the anisotropy field and the coefficient of SO interaction across all studied nanomagnets. This opposite polarity indicates that the gate-voltage modulation of spin-orbit interaction is not the primary contributor to the voltage-controlled magnetic anisotropy (VCMA) effect. Instead, the gate-voltage modulation of magnetization emerges as the most probable candidate, given its polarity aligns with the observed modulation of anisotropy. The modulation of magnetic anisotropy is influenced by two major contributions of opposite polarities, which effectively counterbalance each other and reduce the overall VCMA effect. Optimizing the balance between these contributions could potentially lead to a substantial enhancement of the VCMA effect. Our measurements did not detect any modulation of the in-plane component of spin accumulation by the gate voltage. |
| title | Features and Peculiarities of Gate-Voltage Modulation of Spin-Orbit Interaction in FeCoB Nanomagnets: Insights into the Physical Origins of the VCMA Effect |
| topic | Mesoscale and Nanoscale Physics |
| url | https://arxiv.org/abs/2404.15695 |