Low thermal boundary resistance at bonded GaN/diamond interface by controlling ultrathin heterogeneous amorphous layer
Fuente:
arXiv
Guardado en:
| Autores principales: | , , , , , |
|---|---|
| Formato: | Preprint |
| Publicado: |
2024
|
| Materias: | |
| Acceso en línea: | |
| Etiquetas: |
Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!
|
| _version_ | 1866913327857270784 |
|---|---|
| author | Xu, Bin Mu, Fengwen Liu, Yingzhou Guo, Rulei Hu, Shiqian Shiomi, Junichiro |
| author_facet | Xu, Bin Mu, Fengwen Liu, Yingzhou Guo, Rulei Hu, Shiqian Shiomi, Junichiro |
| contents | Thermal boundary resistance (TBR) in semiconductor-on-diamond structure bottlenecks efficient heat dissipation in electronic devices. In this study, to reduce the TBR between GaN and diamond, surface-activated bonding with a hybrid SiOx-Ar ion source was applied to achieve an ultrathin interfacial layer. The simultaneous surface activation and slow deposition of the SiOx binder layer enabled precise control over layer thickness (2.5-5.3 nm) and formation of an amorphous heterogeneous nanostructure comprising a SiOx region between two inter-diffusion regions. Crucially, the 2.5-nm-thick interfacial layer achieved a TBR of 8.3 m2-W/GW, a record low for direct-bonded GaN/diamond interface. A remarkable feature is that the TBR is extremely sensitive to the interfacial thickness; rapidly increasing to 34 m2-K/GW on doubling the thickness to 5.3 nm. Theoretical analysis revealed the origin of this increase: a diamond/SiOx interdiffusion layer extend the vibrational frequency, far-exceeding that of crystalline diamond, which increases the lattice vibrational mismatch and suppresses phonon transmission. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2404_15738 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Low thermal boundary resistance at bonded GaN/diamond interface by controlling ultrathin heterogeneous amorphous layer Xu, Bin Mu, Fengwen Liu, Yingzhou Guo, Rulei Hu, Shiqian Shiomi, Junichiro Materials Science Thermal boundary resistance (TBR) in semiconductor-on-diamond structure bottlenecks efficient heat dissipation in electronic devices. In this study, to reduce the TBR between GaN and diamond, surface-activated bonding with a hybrid SiOx-Ar ion source was applied to achieve an ultrathin interfacial layer. The simultaneous surface activation and slow deposition of the SiOx binder layer enabled precise control over layer thickness (2.5-5.3 nm) and formation of an amorphous heterogeneous nanostructure comprising a SiOx region between two inter-diffusion regions. Crucially, the 2.5-nm-thick interfacial layer achieved a TBR of 8.3 m2-W/GW, a record low for direct-bonded GaN/diamond interface. A remarkable feature is that the TBR is extremely sensitive to the interfacial thickness; rapidly increasing to 34 m2-K/GW on doubling the thickness to 5.3 nm. Theoretical analysis revealed the origin of this increase: a diamond/SiOx interdiffusion layer extend the vibrational frequency, far-exceeding that of crystalline diamond, which increases the lattice vibrational mismatch and suppresses phonon transmission. |
| title | Low thermal boundary resistance at bonded GaN/diamond interface by controlling ultrathin heterogeneous amorphous layer |
| topic | Materials Science |
| url | https://arxiv.org/abs/2404.15738 |