Measurement of enhanced spin-orbit coupling strength for donor-bound electron spins in silicon

Fuente: arXiv
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Main Authors: Krishnan, Radha, Gan, Beng Yee, Hsueh, Yu-Ling, Huq, A. M. Saffat-Ee, Kenny, Jonathan, Rahman, Rajib, Koh, Teck Seng, Simmons, Michelle Y., Weber, Bent
Format: Preprint
Published: 2024
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author Krishnan, Radha
Gan, Beng Yee
Hsueh, Yu-Ling
Huq, A. M. Saffat-Ee
Kenny, Jonathan
Rahman, Rajib
Koh, Teck Seng
Simmons, Michelle Y.
Weber, Bent
author_facet Krishnan, Radha
Gan, Beng Yee
Hsueh, Yu-Ling
Huq, A. M. Saffat-Ee
Kenny, Jonathan
Rahman, Rajib
Koh, Teck Seng
Simmons, Michelle Y.
Weber, Bent
contents While traditionally considered a deleterious effect in quantum dot spin qubits, the spin-orbit interaction is recently being revisited as it allows for rapid coherent control by on-chip AC electric fields. For electrons in bulk silicon, SOC is intrinsically weak, however, it can be enhanced at surfaces and interfaces, or through atomic placement. Here we show that the strength of the spin-orbit coupling can be locally enhanced by more than two orders of magnitude in the manybody wave functions of multi-donor quantum dots compared to a single donor, reaching strengths so far only reported for holes or two-donor system with certain symmetry. Our findings may provide a pathway towards all-electrical control of donor-bound spins in silicon using electric dipole spin resonance (EDSR).
format Preprint
id arxiv_https___arxiv_org_abs_2404_15762
institution arXiv
publishDate 2024
record_format arxiv
spellingShingle Measurement of enhanced spin-orbit coupling strength for donor-bound electron spins in silicon
Krishnan, Radha
Gan, Beng Yee
Hsueh, Yu-Ling
Huq, A. M. Saffat-Ee
Kenny, Jonathan
Rahman, Rajib
Koh, Teck Seng
Simmons, Michelle Y.
Weber, Bent
Mesoscale and Nanoscale Physics
Quantum Physics
While traditionally considered a deleterious effect in quantum dot spin qubits, the spin-orbit interaction is recently being revisited as it allows for rapid coherent control by on-chip AC electric fields. For electrons in bulk silicon, SOC is intrinsically weak, however, it can be enhanced at surfaces and interfaces, or through atomic placement. Here we show that the strength of the spin-orbit coupling can be locally enhanced by more than two orders of magnitude in the manybody wave functions of multi-donor quantum dots compared to a single donor, reaching strengths so far only reported for holes or two-donor system with certain symmetry. Our findings may provide a pathway towards all-electrical control of donor-bound spins in silicon using electric dipole spin resonance (EDSR).
title Measurement of enhanced spin-orbit coupling strength for donor-bound electron spins in silicon
topic Mesoscale and Nanoscale Physics
Quantum Physics
url https://arxiv.org/abs/2404.15762