Impact of Top SiO2 interlayer Thickness on Memory Window of Si Channel FeFET with TiN/SiO2/Hf0.5Zr0.5O2/SiOx/Si (MIFIS) Gate Structure

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Main Authors: Hu, Tao, Shao, Xianzhou, Bai, Mingkai, Jia, Xinpei, Dai, Saifei, Sun, Xiaoqing, Han, Runhao, Yang, Jia, Ke, Xiaoyu, Tian, Fengbin, Yang, Shuai, Chai, Junshuai, Xu, Hao, Wang, Xiaolei, Wang, Wenwu, Ye, Tianchun
Format: Preprint
Published: 2024
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author Hu, Tao
Shao, Xianzhou
Bai, Mingkai
Jia, Xinpei
Dai, Saifei
Sun, Xiaoqing
Han, Runhao
Yang, Jia
Ke, Xiaoyu
Tian, Fengbin
Yang, Shuai
Chai, Junshuai
Xu, Hao
Wang, Xiaolei
Wang, Wenwu
Ye, Tianchun
author_facet Hu, Tao
Shao, Xianzhou
Bai, Mingkai
Jia, Xinpei
Dai, Saifei
Sun, Xiaoqing
Han, Runhao
Yang, Jia
Ke, Xiaoyu
Tian, Fengbin
Yang, Shuai
Chai, Junshuai
Xu, Hao
Wang, Xiaolei
Wang, Wenwu
Ye, Tianchun
contents We study the impact of top SiO2 interlayer thickness on memory window of Si channel FeFET with TiN/SiO2/Hf0.5Zr0.5O2/SiOx/Si (MIFIS) gate structure. The memory window increases with thicker top SiO2. We realize the memory window of 6.3 V for 3.4 nm top SiO2. Moreover, we find that the endurance characteristic degrades with increasing the initial memory window.
format Preprint
id arxiv_https___arxiv_org_abs_2404_15825
institution arXiv
publishDate 2024
record_format arxiv
spellingShingle Impact of Top SiO2 interlayer Thickness on Memory Window of Si Channel FeFET with TiN/SiO2/Hf0.5Zr0.5O2/SiOx/Si (MIFIS) Gate Structure
Hu, Tao
Shao, Xianzhou
Bai, Mingkai
Jia, Xinpei
Dai, Saifei
Sun, Xiaoqing
Han, Runhao
Yang, Jia
Ke, Xiaoyu
Tian, Fengbin
Yang, Shuai
Chai, Junshuai
Xu, Hao
Wang, Xiaolei
Wang, Wenwu
Ye, Tianchun
Applied Physics
We study the impact of top SiO2 interlayer thickness on memory window of Si channel FeFET with TiN/SiO2/Hf0.5Zr0.5O2/SiOx/Si (MIFIS) gate structure. The memory window increases with thicker top SiO2. We realize the memory window of 6.3 V for 3.4 nm top SiO2. Moreover, we find that the endurance characteristic degrades with increasing the initial memory window.
title Impact of Top SiO2 interlayer Thickness on Memory Window of Si Channel FeFET with TiN/SiO2/Hf0.5Zr0.5O2/SiOx/Si (MIFIS) Gate Structure
topic Applied Physics
url https://arxiv.org/abs/2404.15825