Quantum bit with telecom wave-length emission from a simple defect in Si

Documenti analoghi

• Quantum Emission from Coupled Spin Pairs in Hexagonal Boron Nitride
  di: Li, Song, et al.
  Pubblicazione: (2024)
• Sulfur in diamond and its effect on the creation of nitrogen-vacancy defect from \textit{ab initio} simulations
  di: Cherati, Nima Ghafari, et al.
  Pubblicazione: (2024)
• Spin-active chlorine-related centers in 4H-SiC with telecom-band emissions
  di: Shafizadeh, Danial, et al.
  Pubblicazione: (2026)
• Extended spin relaxation times of optically addressed telecom defects in silicon carbide
  di: Ahn, Jonghoon, et al.
  Pubblicazione: (2024)
• Magneto-optical properties of the neutral silicon-vacancy center in diamond under extreme isotropic strain fields
  di: Mohseni, Meysam, et al.
  Pubblicazione: (2026)