Strong Damping-Like Torques in Wafer-Scale MoTe${}_2$ Grown by MOCVD

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Hauptverfasser: Chyczewski, Stasiu Thomas, Lee, Hanwool, Li, Shuchen, Eladl, Marwan, Zheng, Jun-Fei, Hoffmann, Axel, Zhu, Wenjuan
Format: Preprint
Veröffentlicht: 2024
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author Chyczewski, Stasiu Thomas
Lee, Hanwool
Li, Shuchen
Eladl, Marwan
Zheng, Jun-Fei
Hoffmann, Axel
Zhu, Wenjuan
author_facet Chyczewski, Stasiu Thomas
Lee, Hanwool
Li, Shuchen
Eladl, Marwan
Zheng, Jun-Fei
Hoffmann, Axel
Zhu, Wenjuan
contents The scalable synthesis of strong spin orbit coupling (SOC) materials such as 1T${}^\prime$ phase MoTe${}_2$ is crucial for spintronics development. Here, we demonstrate wafer-scale growth of 1T${}^\prime$ MoTe${}_2$ using metal-organic chemical vapor deposition (MOCVD) with sputtered Mo and (C${}_4$H${}_9$)${}_2$Te. The synthesized films show uniform coverage across the entire sample surface. By adjusting the growth parameters, a synthesis process capable of producing 1T${}^\prime$ and 2H MoTe${}_2$ mixed phase films was achieved. Notably, the developed process is compatible with back-end-of-line (BEOL) applications. The strong spin-orbit coupling of the grown 1T${}^\prime$ MoTe${}_2$ films was demonstrated through spin torque ferromagnetic resonance (ST-FMR) measurements conducted on a 1T${}^\prime$ MoTe${}_2$/permalloy bilayer RF waveguide. These measurements revealed a significant damping-like torque in the wafer-scale 1T${}^\prime$ MoTe${}_2$ film and indicated high spin-charge conversion efficiency. The BEOL compatible process and potent spin orbit torque demonstrate promise in advanced device applications.
format Preprint
id arxiv_https___arxiv_org_abs_2404_19135
institution arXiv
publishDate 2024
record_format arxiv
spellingShingle Strong Damping-Like Torques in Wafer-Scale MoTe${}_2$ Grown by MOCVD
Chyczewski, Stasiu Thomas
Lee, Hanwool
Li, Shuchen
Eladl, Marwan
Zheng, Jun-Fei
Hoffmann, Axel
Zhu, Wenjuan
Materials Science
The scalable synthesis of strong spin orbit coupling (SOC) materials such as 1T${}^\prime$ phase MoTe${}_2$ is crucial for spintronics development. Here, we demonstrate wafer-scale growth of 1T${}^\prime$ MoTe${}_2$ using metal-organic chemical vapor deposition (MOCVD) with sputtered Mo and (C${}_4$H${}_9$)${}_2$Te. The synthesized films show uniform coverage across the entire sample surface. By adjusting the growth parameters, a synthesis process capable of producing 1T${}^\prime$ and 2H MoTe${}_2$ mixed phase films was achieved. Notably, the developed process is compatible with back-end-of-line (BEOL) applications. The strong spin-orbit coupling of the grown 1T${}^\prime$ MoTe${}_2$ films was demonstrated through spin torque ferromagnetic resonance (ST-FMR) measurements conducted on a 1T${}^\prime$ MoTe${}_2$/permalloy bilayer RF waveguide. These measurements revealed a significant damping-like torque in the wafer-scale 1T${}^\prime$ MoTe${}_2$ film and indicated high spin-charge conversion efficiency. The BEOL compatible process and potent spin orbit torque demonstrate promise in advanced device applications.
title Strong Damping-Like Torques in Wafer-Scale MoTe${}_2$ Grown by MOCVD
topic Materials Science
url https://arxiv.org/abs/2404.19135