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| Main Authors: | , , , , , , |
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| Format: | Preprint |
| Published: |
2024
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| Subjects: | |
| Online Access: | https://arxiv.org/abs/2404.19161 |
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| _version_ | 1866908409479036928 |
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| author | McAllister, Ben T. Zhao, Zijun C. Bourhill, Jeremy F. Goryachev, Maxim Creedon, Daniel Johnson, Brett C. Tobar, Michael E. |
| author_facet | McAllister, Ben T. Zhao, Zijun C. Bourhill, Jeremy F. Goryachev, Maxim Creedon, Daniel Johnson, Brett C. Tobar, Michael E. |
| contents | Silicon is a key semiconducting material for electrical devices and hybrid quantum systems where low temperatures and zero-spin isotopic purity can enhance quantum coherence. Electrical conductivity in Si is characterised by carrier freeze out at around 40 K allowing microwave transmission which is a key component for addressing spins efficiently in silicon quantum technologies. In this work, we report an additional sharp transition of the electrical conductivity in a Si-28 cylindrical cavity at around 1 Kelvin. This is observed by measuring microwave resonator Whispering Gallery Mode frequencies and Q factors with changing temperature and comparing these results with finite element models. We attribute this change to a transition from a relaxation mechanism-dominated to a resonant phonon-less absorption-dominated hopping conduction regime. Characterising this regime change represents a deeper understanding of a physical phenomenon in a material of high interest to the quantum technology and semiconductor device community and the impact of these results is discussed. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2404_19161 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Conductivity Freeze-Out in Isotopically Pure Si-28 at milli-Kelvin Temperatures McAllister, Ben T. Zhao, Zijun C. Bourhill, Jeremy F. Goryachev, Maxim Creedon, Daniel Johnson, Brett C. Tobar, Michael E. Materials Science Silicon is a key semiconducting material for electrical devices and hybrid quantum systems where low temperatures and zero-spin isotopic purity can enhance quantum coherence. Electrical conductivity in Si is characterised by carrier freeze out at around 40 K allowing microwave transmission which is a key component for addressing spins efficiently in silicon quantum technologies. In this work, we report an additional sharp transition of the electrical conductivity in a Si-28 cylindrical cavity at around 1 Kelvin. This is observed by measuring microwave resonator Whispering Gallery Mode frequencies and Q factors with changing temperature and comparing these results with finite element models. We attribute this change to a transition from a relaxation mechanism-dominated to a resonant phonon-less absorption-dominated hopping conduction regime. Characterising this regime change represents a deeper understanding of a physical phenomenon in a material of high interest to the quantum technology and semiconductor device community and the impact of these results is discussed. |
| title | Conductivity Freeze-Out in Isotopically Pure Si-28 at milli-Kelvin Temperatures |
| topic | Materials Science |
| url | https://arxiv.org/abs/2404.19161 |