Ferroelectrically-enhanced Schottky barrier transistors for Logic-in-Memory applications

Fuente: arXiv

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Bibliographic Details
Main Authors:	Nazzari, Daniele, Wind, Lukas, Sistani, Masiar, Mayr, Dominik, Kim, Kihye, Weber, Walter M.
Format:	Preprint
Published:	2024
Subjects:	Applied Physics Emerging Technologies
Online Access:	Acceder al recurso
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Internet

https://arxiv.org/abs/2404.19535