Noise reduction by bias cooling in gated Si/SixGe1-x quantum dots
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| Main Authors: | , , , , , , , , , |
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| Format: | Preprint |
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2024
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| _version_ | 1866917661707862016 |
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| author | Ferrero, Julian Koch, Thomas Vogel, Sonja Schroller, Daniel Adam, Viktor Xue, Ran Seidler, Inga Schreiber, Lars R. Bluhm, Hendrik Wernsdorfer, Wolfgang |
| author_facet | Ferrero, Julian Koch, Thomas Vogel, Sonja Schroller, Daniel Adam, Viktor Xue, Ran Seidler, Inga Schreiber, Lars R. Bluhm, Hendrik Wernsdorfer, Wolfgang |
| contents | Silicon-Germanium heterostructures are a promising quantum circuit platform, but crucial aspects as the long-term charge dynamics and cooldown-to-cooldown variations are still widely unexplored quantitatively. In this letter we present the results of an extensive bias cooling study performed on gated silicon-germanium quantum dots with an Al2O3-dielectric. Over 80 cooldowns were performed in the course of our investigations. The performance of the devices is assessed by low-frequency charge noise measurements in the band of 200 micro Hertz to 10 milli Hertz. We measure the total noise power as a function of the applied voltage during cooldown in four different devices and find a minimum in noise at 0.7V bias cooling voltage for all observed samples. We manage to decrease the total noise power median by a factor of 6 and compute a reduced tunneling current density using Schrödinger-Poisson simulations. Furthermore, we show the variation in noise from the same device in the course of eleven different cooldowns performed under the nominally same conditions. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2405_00238 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Noise reduction by bias cooling in gated Si/SixGe1-x quantum dots Ferrero, Julian Koch, Thomas Vogel, Sonja Schroller, Daniel Adam, Viktor Xue, Ran Seidler, Inga Schreiber, Lars R. Bluhm, Hendrik Wernsdorfer, Wolfgang Mesoscale and Nanoscale Physics Materials Science Silicon-Germanium heterostructures are a promising quantum circuit platform, but crucial aspects as the long-term charge dynamics and cooldown-to-cooldown variations are still widely unexplored quantitatively. In this letter we present the results of an extensive bias cooling study performed on gated silicon-germanium quantum dots with an Al2O3-dielectric. Over 80 cooldowns were performed in the course of our investigations. The performance of the devices is assessed by low-frequency charge noise measurements in the band of 200 micro Hertz to 10 milli Hertz. We measure the total noise power as a function of the applied voltage during cooldown in four different devices and find a minimum in noise at 0.7V bias cooling voltage for all observed samples. We manage to decrease the total noise power median by a factor of 6 and compute a reduced tunneling current density using Schrödinger-Poisson simulations. Furthermore, we show the variation in noise from the same device in the course of eleven different cooldowns performed under the nominally same conditions. |
| title | Noise reduction by bias cooling in gated Si/SixGe1-x quantum dots |
| topic | Mesoscale and Nanoscale Physics Materials Science |
| url | https://arxiv.org/abs/2405.00238 |