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Main Authors: Tang, J., Jiang, K., Tseng, P., Kurchin, R. C., Porter, L. M., Davis, R. F.
Format: Preprint
Published: 2024
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Online Access:https://arxiv.org/abs/2405.00299
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author Tang, J.
Jiang, K.
Tseng, P.
Kurchin, R. C.
Porter, L. M.
Davis, R. F.
author_facet Tang, J.
Jiang, K.
Tseng, P.
Kurchin, R. C.
Porter, L. M.
Davis, R. F.
contents Phase transitions in metastable $α$-, $κ(ε)$-, and $γ$-Ga$_2$O$_3$ films to thermodynamically stable $β$-Ga$_2$O$_3$ during annealing in air, N$_2$, and vacuum have been systematically investigated via in-situ high-temperature X-ray diffraction and scanning electron microscopy. These respective polymorphs exhibited thermal stability to around 471-525$^\circ$C, 773-825$^\circ$C, and 490-575$^\circ$C before transforming into $β$-Ga$_2$O$_3$, across all tested ambient conditions. Particular crystallographic orientation relationships were observed before and after the phase transitions, i.e., (0006) $α$-Ga$_2$O$_3$ $\parallel$ $(\overline{4}02)$ $β$-Ga$_2$O$_3$, (004) $κ(ε)$-Ga$_2$O$_3$ $\parallel$ (310) and $(\overline{4}02)$ $β$-Ga$_2$O$_3$, and (400) $γ$-Ga$_2$O$_3$ $\parallel$ (400) $β$-Ga$_2$O$_3$. The phase transition of $α$-Ga$_2$O$_3$ to $β$-Ga$_2$O$_3$ resulted in catastrophic damage to the film and upheaval of the surface. The respective primary and possibly secondary causes of this damage are the +8.6% volume expansion and the dual displacive and reconstructive transformations that occur during this transition. The $κ(ε)$- and $γ$-Ga$_2$O$_3$ films converted to $β$-Ga$_2$O$_3$ via singular reconstructive transformations with small changes in volume and unchanged surface microstructures.
format Preprint
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institution arXiv
publishDate 2024
record_format arxiv
spellingShingle Thermal stability and phase transformation of $α$-, $κ(ε)$-, and $γ$-Ga$_2$O$_3$ thin films to $β$-Ga$_2$O$_3$ under various ambient conditions
Tang, J.
Jiang, K.
Tseng, P.
Kurchin, R. C.
Porter, L. M.
Davis, R. F.
Materials Science
Applied Physics
Phase transitions in metastable $α$-, $κ(ε)$-, and $γ$-Ga$_2$O$_3$ films to thermodynamically stable $β$-Ga$_2$O$_3$ during annealing in air, N$_2$, and vacuum have been systematically investigated via in-situ high-temperature X-ray diffraction and scanning electron microscopy. These respective polymorphs exhibited thermal stability to around 471-525$^\circ$C, 773-825$^\circ$C, and 490-575$^\circ$C before transforming into $β$-Ga$_2$O$_3$, across all tested ambient conditions. Particular crystallographic orientation relationships were observed before and after the phase transitions, i.e., (0006) $α$-Ga$_2$O$_3$ $\parallel$ $(\overline{4}02)$ $β$-Ga$_2$O$_3$, (004) $κ(ε)$-Ga$_2$O$_3$ $\parallel$ (310) and $(\overline{4}02)$ $β$-Ga$_2$O$_3$, and (400) $γ$-Ga$_2$O$_3$ $\parallel$ (400) $β$-Ga$_2$O$_3$. The phase transition of $α$-Ga$_2$O$_3$ to $β$-Ga$_2$O$_3$ resulted in catastrophic damage to the film and upheaval of the surface. The respective primary and possibly secondary causes of this damage are the +8.6% volume expansion and the dual displacive and reconstructive transformations that occur during this transition. The $κ(ε)$- and $γ$-Ga$_2$O$_3$ films converted to $β$-Ga$_2$O$_3$ via singular reconstructive transformations with small changes in volume and unchanged surface microstructures.
title Thermal stability and phase transformation of $α$-, $κ(ε)$-, and $γ$-Ga$_2$O$_3$ thin films to $β$-Ga$_2$O$_3$ under various ambient conditions
topic Materials Science
Applied Physics
url https://arxiv.org/abs/2405.00299