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| Main Authors: | , , , |
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| Format: | Preprint |
| Published: |
2024
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| Subjects: | |
| Online Access: | https://arxiv.org/abs/2405.00624 |
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| _version_ | 1866914779338113024 |
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| author | Potter, Finlay Zagoskin, Alexandre Saveliev, Sergey Balanov, Alexander G |
| author_facet | Potter, Finlay Zagoskin, Alexandre Saveliev, Sergey Balanov, Alexander G |
| contents | We theoretically study an artificial neuron circuit containing a quantum memristor in the presence of relaxation and dephasing. The charge transport in the quantum element is realized via tunneling of a charge through a quantum particle which shuttles between two terminals -- a functionality reminiscent of classical diffusive memristors. We demonstrate that this physical principle enables hysteretic behavior of the current-voltage characteristics of the quantum device. In addition, being used in artificial neural circuit, the quantum switcher is able to generate self-sustained current oscillations. Our analysis reveals that these self-oscillations are triggered only in quantum regime with a moderate rate of relaxation, and cannot exist either in a purely coherent regime or at a very high decoherence. We investigate the hysteresis and instability leading to the onset of current self-oscillations and analyze their properties depending on the circuit parameters. Our results provide a generic approach to the use of quantum regimes for controlling hysteresis and generating self-oscillations. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2405_00624 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Hysteresis and Self-Oscillations in an Artificial Memristive Quantum Neuron Potter, Finlay Zagoskin, Alexandre Saveliev, Sergey Balanov, Alexander G Quantum Physics We theoretically study an artificial neuron circuit containing a quantum memristor in the presence of relaxation and dephasing. The charge transport in the quantum element is realized via tunneling of a charge through a quantum particle which shuttles between two terminals -- a functionality reminiscent of classical diffusive memristors. We demonstrate that this physical principle enables hysteretic behavior of the current-voltage characteristics of the quantum device. In addition, being used in artificial neural circuit, the quantum switcher is able to generate self-sustained current oscillations. Our analysis reveals that these self-oscillations are triggered only in quantum regime with a moderate rate of relaxation, and cannot exist either in a purely coherent regime or at a very high decoherence. We investigate the hysteresis and instability leading to the onset of current self-oscillations and analyze their properties depending on the circuit parameters. Our results provide a generic approach to the use of quantum regimes for controlling hysteresis and generating self-oscillations. |
| title | Hysteresis and Self-Oscillations in an Artificial Memristive Quantum Neuron |
| topic | Quantum Physics |
| url | https://arxiv.org/abs/2405.00624 |