Sensing Spin Wave Excitations by Spin Defects in Few-Layer Thick Hexagonal Boron Nitride

Fuente: arXiv
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Auteurs principaux: Zhou, Jingcheng, Lu, Hanyi, Chen, Di, Huang, Mengqi, Yan, Gerald Q., Al-matouq, Faris, Chang, Jiu, Djugba, Dziga, Jiang, Zhigang, Wang, Hailong, Du, Chunhui Rita
Format: Preprint
Publié: 2024
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author Zhou, Jingcheng
Lu, Hanyi
Chen, Di
Huang, Mengqi
Yan, Gerald Q.
Al-matouq, Faris
Chang, Jiu
Djugba, Dziga
Jiang, Zhigang
Wang, Hailong
Du, Chunhui Rita
author_facet Zhou, Jingcheng
Lu, Hanyi
Chen, Di
Huang, Mengqi
Yan, Gerald Q.
Al-matouq, Faris
Chang, Jiu
Djugba, Dziga
Jiang, Zhigang
Wang, Hailong
Du, Chunhui Rita
contents Optically active spin defects in wide band-gap semiconductors serve as a local sensor of multiple degrees of freedom in a variety of "hard" and "soft" condensed matter systems. Taking advantage of the recent progress on quantum sensing using van der Waals (vdW) quantum materials, here we report direct measurements of spin waves excited in magnetic insulator Y3Fe5O12 (YIG) by boron vacancy $V_B^-$ spin defects contained in few-layer thick hexagonal boron nitride nanoflakes. We show that the ferromagnetic resonance and parametric spin excitations can be effectively detected by $V_B^-$ spin defects under various experimental conditions through optically detected magnetic resonance measurements. The off-resonant dipole interaction between YIG magnons and $V_B^-$ spin defects is mediated by multi-magnon scattering processes, which may find relevant applications in a range of emerging quantum sensing, computing, and metrology technologies. Our results also highlight the opportunities offered by quantum spin defects in layered two-dimensional vdW materials for investigating local spin dynamic behaviors in magnetic solid-state matters.
format Preprint
id arxiv_https___arxiv_org_abs_2405_00802
institution arXiv
publishDate 2024
record_format arxiv
spellingShingle Sensing Spin Wave Excitations by Spin Defects in Few-Layer Thick Hexagonal Boron Nitride
Zhou, Jingcheng
Lu, Hanyi
Chen, Di
Huang, Mengqi
Yan, Gerald Q.
Al-matouq, Faris
Chang, Jiu
Djugba, Dziga
Jiang, Zhigang
Wang, Hailong
Du, Chunhui Rita
Materials Science
Optically active spin defects in wide band-gap semiconductors serve as a local sensor of multiple degrees of freedom in a variety of "hard" and "soft" condensed matter systems. Taking advantage of the recent progress on quantum sensing using van der Waals (vdW) quantum materials, here we report direct measurements of spin waves excited in magnetic insulator Y3Fe5O12 (YIG) by boron vacancy $V_B^-$ spin defects contained in few-layer thick hexagonal boron nitride nanoflakes. We show that the ferromagnetic resonance and parametric spin excitations can be effectively detected by $V_B^-$ spin defects under various experimental conditions through optically detected magnetic resonance measurements. The off-resonant dipole interaction between YIG magnons and $V_B^-$ spin defects is mediated by multi-magnon scattering processes, which may find relevant applications in a range of emerging quantum sensing, computing, and metrology technologies. Our results also highlight the opportunities offered by quantum spin defects in layered two-dimensional vdW materials for investigating local spin dynamic behaviors in magnetic solid-state matters.
title Sensing Spin Wave Excitations by Spin Defects in Few-Layer Thick Hexagonal Boron Nitride
topic Materials Science
url https://arxiv.org/abs/2405.00802