Anomalous phonon Grüneisen parameters in semiconductor Ta$_2$NiS$_5$

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Hauptverfasser: Ye, Mai, Lacmann, Tom, Frachet, Mehdi, Vinograd, Igor, Garbarino, Gaston, Maraytta, Nour, Merz, Michael, Heid, Rolf, Haghighirad, Amir-Abbas, Tacon, Matthieu Le
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Veröffentlicht: 2024
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author Ye, Mai
Lacmann, Tom
Frachet, Mehdi
Vinograd, Igor
Garbarino, Gaston
Maraytta, Nour
Merz, Michael
Heid, Rolf
Haghighirad, Amir-Abbas
Tacon, Matthieu Le
author_facet Ye, Mai
Lacmann, Tom
Frachet, Mehdi
Vinograd, Igor
Garbarino, Gaston
Maraytta, Nour
Merz, Michael
Heid, Rolf
Haghighirad, Amir-Abbas
Tacon, Matthieu Le
contents Strain tuning is a powerful experimental method in probing correlated electron systems. Here we study the strain response of the lattice dynamics and electronic structure in semiconductor Ta$_2$NiS$_5$ by polarization-resolved Raman spectroscopy. We observe an increase of the size of the direct semiconducting band gap. Although the majority of the optical phonons show only marginal dependence to applied strain, the frequency of the two B$_{2g}$ phonon modes, which have quadrupolar symmetry and already anomalously soften on cooling under zero strain, increases significantly with tensile strain along the $a$ axis. The corresponding Grüneisen parameters are unusually large in magnitude and negative in sign. These effects are well captured by first-principles density functional theory calculations and indicate close proximity of Ta$_2$NiS$_5$ to a structural instability, similar to that encountered in excitonic insulator candidate Ta$_2$NiSe$_5$.
format Preprint
id arxiv_https___arxiv_org_abs_2405_01455
institution arXiv
publishDate 2024
record_format arxiv
spellingShingle Anomalous phonon Grüneisen parameters in semiconductor Ta$_2$NiS$_5$
Ye, Mai
Lacmann, Tom
Frachet, Mehdi
Vinograd, Igor
Garbarino, Gaston
Maraytta, Nour
Merz, Michael
Heid, Rolf
Haghighirad, Amir-Abbas
Tacon, Matthieu Le
Strongly Correlated Electrons
Materials Science
Strain tuning is a powerful experimental method in probing correlated electron systems. Here we study the strain response of the lattice dynamics and electronic structure in semiconductor Ta$_2$NiS$_5$ by polarization-resolved Raman spectroscopy. We observe an increase of the size of the direct semiconducting band gap. Although the majority of the optical phonons show only marginal dependence to applied strain, the frequency of the two B$_{2g}$ phonon modes, which have quadrupolar symmetry and already anomalously soften on cooling under zero strain, increases significantly with tensile strain along the $a$ axis. The corresponding Grüneisen parameters are unusually large in magnitude and negative in sign. These effects are well captured by first-principles density functional theory calculations and indicate close proximity of Ta$_2$NiS$_5$ to a structural instability, similar to that encountered in excitonic insulator candidate Ta$_2$NiSe$_5$.
title Anomalous phonon Grüneisen parameters in semiconductor Ta$_2$NiS$_5$
topic Strongly Correlated Electrons
Materials Science
url https://arxiv.org/abs/2405.01455