Local insulator-to-superconductor transition in amorphous InO$_x$ films modulated by e-beam irradiation
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arXiv
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| Autores principales: | , |
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| Formato: | Preprint |
| Publicado: |
2024
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| _version_ | 1866908634479329280 |
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| author | Llovo, Iago F. Delahaye, Julien |
| author_facet | Llovo, Iago F. Delahaye, Julien |
| contents | We present a novel method enabling precise post-fabrication modulation of the electrical resistance in micrometer-scale regions of amorphous indium oxide (a-InO$_x$) films. By subjecting initially insulating films to an electron beam at room temperature, we demonstrate that the exposed region of the films becomes superconducting. The resultant superconducting transition temperature ($T_c$) is adjustable up to 2.8 K by changing the electron dose and accelerating voltage. This technique offers a compelling alternative to traditional a-InO$_x$ annealing methods for both fundamental investigations and practical applications. Moreover, it empowers independent adjustment of electrical properties across initially identical a-InO$_x$ samples on the same substrate, facilitating the creation of superconducting microstructures with precise $T_c$ control at the micrometer scale. Some possible mechanisms for the observed resistance modifications are discussed. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2405_02276 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Local insulator-to-superconductor transition in amorphous InO$_x$ films modulated by e-beam irradiation Llovo, Iago F. Delahaye, Julien Superconductivity Disordered Systems and Neural Networks Materials Science We present a novel method enabling precise post-fabrication modulation of the electrical resistance in micrometer-scale regions of amorphous indium oxide (a-InO$_x$) films. By subjecting initially insulating films to an electron beam at room temperature, we demonstrate that the exposed region of the films becomes superconducting. The resultant superconducting transition temperature ($T_c$) is adjustable up to 2.8 K by changing the electron dose and accelerating voltage. This technique offers a compelling alternative to traditional a-InO$_x$ annealing methods for both fundamental investigations and practical applications. Moreover, it empowers independent adjustment of electrical properties across initially identical a-InO$_x$ samples on the same substrate, facilitating the creation of superconducting microstructures with precise $T_c$ control at the micrometer scale. Some possible mechanisms for the observed resistance modifications are discussed. |
| title | Local insulator-to-superconductor transition in amorphous InO$_x$ films modulated by e-beam irradiation |
| topic | Superconductivity Disordered Systems and Neural Networks Materials Science |
| url | https://arxiv.org/abs/2405.02276 |