Strain Induced Kramers-Weyl Phase in III-V Zinc Blende Systems

Fuente: arXiv
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Main Authors: Aglagul, Denis, Shi, Jian
Format: Preprint
Published: 2024
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author Aglagul, Denis
Shi, Jian
author_facet Aglagul, Denis
Shi, Jian
contents We present theoretical observations on the topological nature of strained III-V semiconductors. By $k \cdot p$ perturbation, it can be shown that the strain-engineered conduction band hosts a Kramers-Weyl node at the $Γ$ point. It is theoretically shown a curated strain can create and then tune the sign of the topological charge. Furthermore, we outline experimental methods for both the realization and detection of strain-induced topological phase transitions.
format Preprint
id arxiv_https___arxiv_org_abs_2405_03156
institution arXiv
publishDate 2024
record_format arxiv
spellingShingle Strain Induced Kramers-Weyl Phase in III-V Zinc Blende Systems
Aglagul, Denis
Shi, Jian
Materials Science
We present theoretical observations on the topological nature of strained III-V semiconductors. By $k \cdot p$ perturbation, it can be shown that the strain-engineered conduction band hosts a Kramers-Weyl node at the $Γ$ point. It is theoretically shown a curated strain can create and then tune the sign of the topological charge. Furthermore, we outline experimental methods for both the realization and detection of strain-induced topological phase transitions.
title Strain Induced Kramers-Weyl Phase in III-V Zinc Blende Systems
topic Materials Science
url https://arxiv.org/abs/2405.03156