Towards Utilizing Scanning Gate Microscopy as a High-Resolution Probe of Valley Splitting in Si/SiGe Heterostructures
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arXiv
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| Autori principali: | , , , , , , |
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| Natura: | Preprint |
| Pubblicazione: |
2024
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| _version_ | 1866910630068355072 |
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| author | Cakar, Efe Ercan, H. Ekmel Fuchs, Gordian Denisov, Artem O. Anderson, Christopher R. Gyure, Mark F. Petta, Jason R. |
| author_facet | Cakar, Efe Ercan, H. Ekmel Fuchs, Gordian Denisov, Artem O. Anderson, Christopher R. Gyure, Mark F. Petta, Jason R. |
| contents | A detailed understanding of the material properties that affect the splitting between the two low-lying valley states in Si/SiGe heterostructures will be increasingly important as the number of spin qubits is increased. Scanning gate microscopy has been proposed as a method to measure the spatial variation of the valley splitting as a tip-induced dot is moved around in the plane of the Si quantum well. We develop a simulation using an electrostatic model of the scanning gate microscope tip and the overlapping gate structure combined with an approximate solution to the three-dimensional Schrödinger-Poisson equation in the device stack. Using this simulation, we show that a tip-induced quantum dot formed near source and drain electrodes can be adiabatically moved to a region far from the gate electrodes. We argue that by spatially translating the tip-induced dot across a defect in the Si/SiGe interface, changes in valley splitting can be detected. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2405_03596 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Towards Utilizing Scanning Gate Microscopy as a High-Resolution Probe of Valley Splitting in Si/SiGe Heterostructures Cakar, Efe Ercan, H. Ekmel Fuchs, Gordian Denisov, Artem O. Anderson, Christopher R. Gyure, Mark F. Petta, Jason R. Mesoscale and Nanoscale Physics Quantum Physics A detailed understanding of the material properties that affect the splitting between the two low-lying valley states in Si/SiGe heterostructures will be increasingly important as the number of spin qubits is increased. Scanning gate microscopy has been proposed as a method to measure the spatial variation of the valley splitting as a tip-induced dot is moved around in the plane of the Si quantum well. We develop a simulation using an electrostatic model of the scanning gate microscope tip and the overlapping gate structure combined with an approximate solution to the three-dimensional Schrödinger-Poisson equation in the device stack. Using this simulation, we show that a tip-induced quantum dot formed near source and drain electrodes can be adiabatically moved to a region far from the gate electrodes. We argue that by spatially translating the tip-induced dot across a defect in the Si/SiGe interface, changes in valley splitting can be detected. |
| title | Towards Utilizing Scanning Gate Microscopy as a High-Resolution Probe of Valley Splitting in Si/SiGe Heterostructures |
| topic | Mesoscale and Nanoscale Physics Quantum Physics |
| url | https://arxiv.org/abs/2405.03596 |