Memristive switching in the surface of a charge-density-wave topological semimetal
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arXiv
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2024
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| author | Ma, Jianwen Meng, Xianghao Zhang, Binhua Wang, Yuxiang Mou, Yicheng Lin, Wenting Dai, Yannan Chen, Luqiu Wang, Haonan Wu, Haoqi Gu, Jiaming Wang, Jiayu Du, Yuhan Liu, Chunsen Shi, Wu Yang, Zhenzhong Tian, Bobo Miao, Lin Zhou, Peng Duan, Chun-Gang Xu, Changsong Yuan, Xiang Zhang, Cheng |
| author_facet | Ma, Jianwen Meng, Xianghao Zhang, Binhua Wang, Yuxiang Mou, Yicheng Lin, Wenting Dai, Yannan Chen, Luqiu Wang, Haonan Wu, Haoqi Gu, Jiaming Wang, Jiayu Du, Yuhan Liu, Chunsen Shi, Wu Yang, Zhenzhong Tian, Bobo Miao, Lin Zhou, Peng Duan, Chun-Gang Xu, Changsong Yuan, Xiang Zhang, Cheng |
| contents | Owing to the outstanding properties provided by nontrivial band topology, topological phases of matter are considered as a promising platform towards low-dissipation electronics, efficient spin-charge conversion, and topological quantum computation. Achieving ferroelectricity in topological materials enables the non-volatile control of the quantum states, which could greatly facilitate topological electronic research. However, ferroelectricity is generally incompatible with systems featuring metallicity due to the screening effect of free carriers. In this study, we report the observation of memristive switching based on the ferroelectric surface state of a topological semimetal (TaSe4)2I. We find that the surface state of (TaSe4)2I presents out-of-plane ferroelectric polarization due to surface reconstruction. With the combination of ferroelectric surface and charge-density-wave-gapped bulk states, an electric switchable barrier height can be achieved in (TaSe4)2I-metal contact. By employing a multi-terminal grounding design, we manage to construct a prototype ferroelectric memristor based on (TaSe4)2I with on/off ratio up to 10^3, endurance over 10^3 cycles, and good retention characteristics. The origin of the ferroelectric surface state is further investigated by first-principles calculations, which reveals an interplay between ferroelectricity and band topology. The emergence of ferroelectricity in (TaSe4)2I not only demonstrates it as a rare but essential case of ferroelectric topological materials, but also opens new routes towards the implementation of topological materials in functional electronic devices. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2405_03966 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Memristive switching in the surface of a charge-density-wave topological semimetal Ma, Jianwen Meng, Xianghao Zhang, Binhua Wang, Yuxiang Mou, Yicheng Lin, Wenting Dai, Yannan Chen, Luqiu Wang, Haonan Wu, Haoqi Gu, Jiaming Wang, Jiayu Du, Yuhan Liu, Chunsen Shi, Wu Yang, Zhenzhong Tian, Bobo Miao, Lin Zhou, Peng Duan, Chun-Gang Xu, Changsong Yuan, Xiang Zhang, Cheng Materials Science Mesoscale and Nanoscale Physics Owing to the outstanding properties provided by nontrivial band topology, topological phases of matter are considered as a promising platform towards low-dissipation electronics, efficient spin-charge conversion, and topological quantum computation. Achieving ferroelectricity in topological materials enables the non-volatile control of the quantum states, which could greatly facilitate topological electronic research. However, ferroelectricity is generally incompatible with systems featuring metallicity due to the screening effect of free carriers. In this study, we report the observation of memristive switching based on the ferroelectric surface state of a topological semimetal (TaSe4)2I. We find that the surface state of (TaSe4)2I presents out-of-plane ferroelectric polarization due to surface reconstruction. With the combination of ferroelectric surface and charge-density-wave-gapped bulk states, an electric switchable barrier height can be achieved in (TaSe4)2I-metal contact. By employing a multi-terminal grounding design, we manage to construct a prototype ferroelectric memristor based on (TaSe4)2I with on/off ratio up to 10^3, endurance over 10^3 cycles, and good retention characteristics. The origin of the ferroelectric surface state is further investigated by first-principles calculations, which reveals an interplay between ferroelectricity and band topology. The emergence of ferroelectricity in (TaSe4)2I not only demonstrates it as a rare but essential case of ferroelectric topological materials, but also opens new routes towards the implementation of topological materials in functional electronic devices. |
| title | Memristive switching in the surface of a charge-density-wave topological semimetal |
| topic | Materials Science Mesoscale and Nanoscale Physics |
| url | https://arxiv.org/abs/2405.03966 |