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| Autores principales: | , , , , , , , , , , , , |
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| Formato: | Preprint |
| Publicado: |
2024
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| Materias: | |
| Acceso en línea: | https://arxiv.org/abs/2405.03976 |
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| _version_ | 1866912458427334656 |
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| author | Chen, Linshang Long, Haoran Wu, Heng Mei, Rui Su, Zhengyu Feng, Mengjie Wu, Jiang-Bin Watanabe, Kenji Taniguchi, Takashi Cao, Xuewei Wei, Zhongming Tan, Ping-Heng Shi, Yanmeng |
| author_facet | Chen, Linshang Long, Haoran Wu, Heng Mei, Rui Su, Zhengyu Feng, Mengjie Wu, Jiang-Bin Watanabe, Kenji Taniguchi, Takashi Cao, Xuewei Wei, Zhongming Tan, Ping-Heng Shi, Yanmeng |
| contents | The ferroelectricity emerging in non-polar graphene/hexagonal boron nitride (hBN) heterostructures has drawn considerable attention because of its fascinating properties and promising high-frequency electrical polarization switching. Yet, the underlying mechanism is still under debate. Here in twisted double bilayer graphene (TDBLG) aligned with its neighboring hBN, we observed two types of hysteresis - delayed hysteresis in top gate induced by the anomalous screening, and advanced hysteresis in back gate caused by the anomalous gate-tunable capacitance. To investigate the role played by moiré potential in the anomalous hysteresis, we studied a moiréless graphene heterostructure as control experiment. Unexpectedly, we observed exactly the same phenomena in this control device. Our findings suggest that the anomalous ferroelectricity in graphene/hBN heterostructures may originate from the dielectric material hBN, calling for further structural investigations on hBN. The observation of gate-tunable capacitance provides more insights in the mysterious ferroelectricity in graphene/hBN heterostructures, and should enable new design of memory devices such as memcapacitor based on tunable capacitance. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2405_03976 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Anomalous Gate-tunable Capacitance in Van der Waals Heterostructures Chen, Linshang Long, Haoran Wu, Heng Mei, Rui Su, Zhengyu Feng, Mengjie Wu, Jiang-Bin Watanabe, Kenji Taniguchi, Takashi Cao, Xuewei Wei, Zhongming Tan, Ping-Heng Shi, Yanmeng Mesoscale and Nanoscale Physics Materials Science The ferroelectricity emerging in non-polar graphene/hexagonal boron nitride (hBN) heterostructures has drawn considerable attention because of its fascinating properties and promising high-frequency electrical polarization switching. Yet, the underlying mechanism is still under debate. Here in twisted double bilayer graphene (TDBLG) aligned with its neighboring hBN, we observed two types of hysteresis - delayed hysteresis in top gate induced by the anomalous screening, and advanced hysteresis in back gate caused by the anomalous gate-tunable capacitance. To investigate the role played by moiré potential in the anomalous hysteresis, we studied a moiréless graphene heterostructure as control experiment. Unexpectedly, we observed exactly the same phenomena in this control device. Our findings suggest that the anomalous ferroelectricity in graphene/hBN heterostructures may originate from the dielectric material hBN, calling for further structural investigations on hBN. The observation of gate-tunable capacitance provides more insights in the mysterious ferroelectricity in graphene/hBN heterostructures, and should enable new design of memory devices such as memcapacitor based on tunable capacitance. |
| title | Anomalous Gate-tunable Capacitance in Van der Waals Heterostructures |
| topic | Mesoscale and Nanoscale Physics Materials Science |
| url | https://arxiv.org/abs/2405.03976 |